| ID | 原文 | 译文 |
| 42326 | 利用光荧光谱技术、近红外吸收测量和非接触式电阻率测试系统研究了晶体中 Fe 杂质的分布特性。 | The distribution characteristics of Fe impurity in the crystal were investigated by using photoluminescence mapping technology, near infrared absorption measurement and non-contact resistivity test system. |
| 42327 | 测试结果表明，在垂直晶锭生长方向切下的 ( 100) InP 晶片中，Fe 杂质浓度分布一般呈环状，从样品中心部位到边缘部位 Fe 杂质浓度逐渐升高， | The experimental results indicate that in (100) InP wafers cut perpendicular to the growth direction of theingot, the distribution of Fe impurity concentration generally has a ring shape, which gradually increasesfrom the center to the edge of the sample. |
| 42328 | 这是由于晶体拉制过程中，固液界面为凸向熔体形状所致。 | It is caused by the convex shape of the solid-liquid interfaceduring the growth process of the crystal. |
| 42329 | 但在有些 ( 100) InP 样品中，Fe 杂质浓度呈条状分布。 | However, in some (100) InP samples, the Fe impurity concentration is distributed in strips. |
| 42330 | 这种条状的 Fe 杂质浓度分布特征与晶体生长过程中熔体的对流形成的涡胞形状和涡流方向有关。 | The strip-shaped Fe impurity concentration distribution characteristic is relatedto the shape and direction of the vortex formed by the convection of the melt during crystal growth. |
| 42331 | 因此，固液界面并不是影响 Fe 杂质浓度分布的唯一因素， | Therefore, the solid-liquid interface is not the only factor affecting Fe impurity concentration distribution. |
| 42332 | 熔体中涡流对 Fe 杂质浓度分布的影响是拉制掺 Fe InP 单晶工艺中需要考虑的重要因素之一。 | The influence of vortex in the melt on the distribution of Fe impurity concentration is an important factor to beconsidered in the process of growing Fe-doped InP single crystals. |
| 42333 | 二维层状 MoS2 薄膜具有超高的光响应度、高导电特性、良好的光学透明度以及优异的机械性能，是制造多功能和高性能光电探测器、传感器等最理想的半导体材料之一。 | The two-dimensional layered MoS2 thin film is one of optimal semiconductor materials forfabricating multi-function and high-performance photodetectors and sensors due to its superior properties, such as ultra-high light response, high electrical conductivity, good optical transparency and outstandingmechanical properties. |
| 42334 | 在不同衬底上制备的 MoS2 薄膜性质有所差异，其构成的异质结性能也各具特色。 | The properties of MoS2 thin films grown on different substrates are different, andthe performances of the corresponding heterojunctions are also different. |
| 42335 | 首先，介绍了常用于制备层状 MoS2 薄膜的化学气相沉积 ( CVD) 法和高温热分解法; | Firstly, the chemical vapor deposition (CVD) method and high temperature thermal decomposition method commonly used to preparelayered MoS2 thin films are introduced. |