ID 原文 译文
42306 该研究结果为 GaN 功率开关及驱动器进一步使用微波单片集成电路 ( MMIC) 工艺进行全集成提供了理论依据和实测数据。 This research result provides theoreticalbasis and measured data for further full integration of GaN power switches and drivers using monolithicmicrowave integrated circuit (MMIC) process.
42307 基于 GaAs 赝配高电子迁移率晶体管 ( PHEMT) 工艺，研制了一款 0. 8 ～ 2. 7 GHz 的高线性驱动放大器。 A high linearity driver amplifier operating from 0.8 GHz to 2.7 GHz was designed andfabricated based on the GaAs pseudomorphic high electron mobility transistor (PHEMT) process.
42308 电路放大部分采用多胞合成技术，避免了工艺对栅宽的限制，同时可以提升输入和输出阻抗。 Themulti-cell synthesis technology was adopted in the amplifying part of the circuit to avoid the process limitation of gate width, and the input and output impedance can be improved.
42309 偏置电路采用带负反馈系统的有源镜像结构实现，与传统的有源偏置结构相比，引入一个负反馈系统，提高了驱动能力，使电路更加稳定。 The bias circuit was realizedby an active current mirror structure with a negative feedback system.Compared with traditional activebias structures, the introduction of a negative system can improve the driving capability and stability ofthe circuit.
42310 电路采用+5 V 电源供电，静态工作电流为 130 mA。 The amplifier adopts +5 V power supply while consuming 130 mA quiescent current.
42311 该放大器在 860 ～ 960 MHz、2. 1 ～ 2. 2 GHz 和 2. 3 ～ 2. 7 GHz 性能良好，在2. 6 GHz 处的小信号增益为 14. 3 dB，1 dB 压缩点输出功率 ( Po( 1 dB) ) 为 28. 4 dBm，Po( 1 dB) 处的功率附加效率为 41. 6%，输出三阶交调点为 37. 5 dBm。 The amplifier performs well in 860－960 MHz, 2.1－2.2 GHz and 2.3－2.7 GHz, and exhibits a small signalgain of 14.3 dB, an output power at 1 dB compression point (Po(1 dB)) of 28.4 dBm, a power added efficiency at Po(1 dB) of 41.6% and an output third order intercept point of 37.5 dBm at 2.6 GHz.
42312 采用片外匹配，不仅节省芯片面积，还可以通过调整输入和输出匹配网络，满足 5G 基站等移动通信系统不同频段的应用需求。 The adoption of external matching reduces the chip size, and can meet the application requirements of different frequency bands in 5G base station and other mobile communication systems by adjusting the input and output matching network.
42313 针对 Ka 波段单片收发 ( T /Ｒ) 集成电路对发射大功率和高隔离度的需求，分析了传统单刀双掷 ( SPDT) 开关中并联、串联晶体管尺寸对插入损耗、隔离度和线性度的影响， To meet the requirements of Ka-band monolithic transmit-receive (T /Ｒ) integratedcircuit for transmitting high power and high isolation, the influences of the sizes of parallel and seriestransistors of traditional single-pole double-throw (SPDT) switch on insertion loss, isolation and linearitywere analyzed.
42314 设计了一款非对称的毫米波单刀双掷开关，通过去除发射通道上的并联支路，提高发射通道的 1 dB压缩点输出功率。 An asymmetric millimeter wave SPDT switch was designed, and the 1 dB compressionpoint output power of the transmitting channel was increased by removing the parallel branch on the transmitting channel.
42315 同时，通过串联和并联电感与晶体管寄生电容并联谐振的方式，提高发射和接收通道的隔离度。 At the same time, the isolations of transmitting and receiving channels were improved bythe way of parallel or series inductor resonance with the parasitic capacitance.