ID 原文 译文
42296 研究了基于 FA/O Ⅱ的碱性清洗液中抑制剂 1，2，4-三氮唑 ( TAZ) 对 Cu 表面磨料颗粒去除及 Cu、Co 电偶腐蚀的影响， The effects of 1, 2, 4-triazole (TAZ) in the alkaline cleaning solution based on FA/O Ⅱ on the removalof abrasive particles adsorbed on the Cu surface and galvanic corrosion of Cu and Co were studied.
42297 使用扫描电子显微镜 ( SEM) 检测洗清后晶圆的表面形态和颗粒残留， The scanning electron microscope (SEM) was used to detect the surface morphology and residue particles ofthe wafer after cleaning.
42298 并通过电化学实验研究清洗液中不同浓度的 TAZ 引起的 Cu 和 Co 之间的腐蚀电位差及腐蚀电流的变化。 The effects of different concentrations of TAZ in the cleaning solution on the corrosion potential difference between Cu and Co and the corrosion current of them were studied by the electrochemical experiment.
42299 实验结果表明 TAZ 可以降低 Cu 表面的接触角，有利于颗粒的去除; The experimental results show that TAZ can decrease the contact angle of Cu surface, which is conducive to particle removal.
42300 含有 25 mmol /L TAZ 的清洗液去除了 Cu 表面大部分颗粒; The cleaning solution containing 25 mmol /L TAZ can remove most of the particles on the Cu surface.
42301 含有 20 mmol /L TAZ 的清洗液可使 Cu 和 Co 之间的腐蚀电位差降低到 0. 178 V，有效抑制了电偶腐蚀。 In addition, the cleaning solution containing 20 mmol /LTAZ can reduce the corrosion potential difference between Cu and Co to 0.178 V, effectively inhibitinggalvanic corrosion.
42302 介绍了一种用于高功率高速 GaN 功率开关的全 GaN 栅驱动电路。该电路主要基于两个常开型 GaN HEMT 和一个自偏置电阻。 A full GaN gate driver circuit for high power and high speed GaN power switches was introduced, which was mainly based on two normally-on GaN HEMTs and a self-biasing resistor.
42303 根据该拓扑结构的门限效应，提出了集成脉冲宽度调制功能的全 GaN 栅极驱动器。 According to the threshold effect of the presented topology, a full GaN gate driver with integrated pulse width modulation function was proposed.
42304 使用两个 6 W 的 GaN HEMT 搭建该驱动器，并将其输出连接到一个 45 W GaN 功率开关的栅极，形成一个 DC /DC 升压转换器的低侧开关，并进行实验验证。 Two 6 W GaN HEMTs were used to build the driver, and its output wasconnected to the gate of a 45 W GaN power switch to form a low-side switch of a DC /DC boost converterfor experimental verification.
42305 实验结果表明，在 20% ～80%占空比下，电路具有低损耗 ( 约 1 W) 和高达 60 MHz 的开关工作频率，测得的方波开关时间达到了纳秒级。 The experimental results show that the circuit has low consumption (about1 W) and high switching operation frequency up to 60 MHz over the 20%－80% duty cycle range.Andthe measured square wave switching time reaches nanoseconds.