ID 原文 译文
42266 注入反应腔室的掺杂量必须不断减少才能保持外延层电阻率稳定。 The amount of dopant injected into thereaction chamber should be reduced continuously to keep the resistivity of the epitaxial layer stable.
42267 通过研究 PM 后不同天数外延片制备肖特基势垒二极管( SBD) 的击穿电压发现，外延片不同区域制备的 SBD 击穿电压差随 PM 后天数的增加而增加。 By studying the breakdown voltage of the Schottky barrier diode (SBD) fabricated with epitaxial wafers ondifferent days after PM, it is found that with the increase of days after PM, the breakdown voltage difference of SBDs prepared in different areas of epitaxial wafers increases.
42268 通过增加外延片边缘厚度，提高了 PM 后期外延片边缘区域制备 SBD 的击穿电压， By increasing the edge thickness of epitaxial wafers, the breakdown voltage of SBDs prepared in the edge region of the epitaxial waferover the later PM period was increased.
42269 击穿电压最大值与最小值之差从 4. 34 V 减小到 2. 88 V，满足客户使用要求。 The breakdown voltage difference between the maximum valueand minimum value was decreased from 4.34 V to 2.88 V, which meets the customer requirements.
42270 研究了新型缓蚀剂 2，2'-{［( 甲基-1H-苯并三唑-1-基) 甲基］亚氨基} 双乙醇( TT) 和抛光液 pH 值对铜图形片( 以 Ｒu /TaN 为阻挡层) 化学机械平坦化( CMP) 性能的影响。 The influences of the pH value of the polishing solution and a new corrosion inhibitor2, 2'-{ ［(methyl-1H-benzotriazol-1-yl) methyl］imino} diethanol (TT) on chemical mechanical planarization (CMP) performance of Cu patterned wafer with Ｒu /TaN as barrier layer were studied.
42271 实验结果表明，Cu 的去除速率及静态腐蚀速率随着抛光液 pH 值的增高而增大，随着 TT 体积分数的升高而逐渐下降; The experimental results show that the removal rate and static corrosion rate of Cu increase with the increase of thepH value of the polishing solution, and gradually decrease with the increase of TT volume fraction.
42272 TT 对 Cu 去除速率和静态腐蚀速率的抑制效果随着抛光液 pH 值的升高而降低。 Meanwhile, the passivation effect of TT on removal rate and static corrosion rate of Cu decreases with the increase of the pH value of the polishing solution.
42273 缓蚀剂 TT 能够有效减小碟形坑及蚀坑的深度，对于铜图形片不同线宽的碟形坑及不同密度的蚀坑均有较好的修正效果， The corrosion inhibitor TT can effectively reduce thedepths of the dishing pit and erosion pit.It has a good correction effect on dishing pit with different linewidths of Cu patterned wafer and erosion pit with different densities, and it can self-stop on the barrierlayer Ｒu /TaN film.
42274 且能够自停止在阻挡层 Ｒu /TaN 薄膜，其 CMP 机理为 TT 与 Cu 形成 Cu-TT钝化膜吸附在 Cu 表面，阻挡了 Cu 的进一步腐蚀，提高了 CMP 性能。 The CMP mechanism is that Cu-TT passivation film formed by TT and Cu is adsorbedon the surface of Cu, which can prevent further corrosion of Cu and improve the CMP performance.
42275 高温导致垂直腔面发射激光器 ( VCSEL) 的输出功率滚降，功率转换效率降低。 High temperature results in the rollover of the output power of vertical cavity surfaceemitting lasers (VCSELs) and the reduction of the power conversion efficiency.