ID 原文 译文
42256 比遗传算法 ( GA) 优化的 BP ( GA-BP) 神经网络算法以及经典 BP 神经网络算法能更准确预测 IGBT 结温。 Compared with the genetic algorithm (GA) optimized BP (GA-BP) neural networkalgorithm and classical BP neural network algorithm, the MEA-BP neural network algorithm can predict the IGBT junction temperature more accurately.
42257 通过提升功率传输效率和降低电路功耗，设计了一种适用于低功率微弱能量收集的DC-DC 升压转换器。 A DC-DC boost converter for low power weak energy harvesting was designed by improving power transmission efficiency and reducing power consumption.
42258 升压转换器主要包括核心电路、最大功率点跟踪 ( MPPT) 电路、零电流开关 ( ZCS) 转换电路、振荡器、电荷泵和偏置电路。 The boost converter mainly includesthe core circuit, maximum power point tracking (MPPT) circuit, zero current switch (ZCS) conversioncircuit, oscillator, charge pump and bias circuit.
42259 采用开路电压法检测输入功率，并适时调整开关导通时间，以调整输入阻抗，实现对能量源的 MPPT 传输; The open circuit voltage method was adopted to detectthe input power and adjust the conduction time of the switch to adjust the input impedance, realizing theMPPT transmission of the energy source.
42260 同时，采用特殊供电的 ZCS，减小电路的亚阈值泄漏，提升转换效率。 Meanwhile, a special power supply ZCS was adopted to reducethe sub-threshold leakage of the circuit and increase the conversion efficiency.
42261 基于 65 nm CMOS 工艺对 DC-DC 升压转换器进行设计，芯片面积为 260 μm×380 μm。 The DC-DC boost converterwas designed based on 65 nm CMOS process, and the chip area was 260 μm×380 μm.
42262 仿真结果表明，在输入功率－7 ～ －30 dBm 内、能量源内阻 50 Ω ～10 kΩ 的条件下，跟踪效率峰值为 99. 81%。 The simulationresults show that the peak tracking efficiency is 99.81% when the input power ranges from －7 dBm to－30 dBm and energy source internal resistance ranges from 50 Ω to 10 kΩ.
42263 同时，在最低输入电压为 35 mV、DC-DC 转换器输出电压为 1 V 时，电路转换效率峰值为 90. 46%，整体功耗低于 1. 2 μW。 At the same time, the peakconversion efficiency of the circuit is 90.46% and total power consumption is less than 1.2 μW when theminimum input voltage is 35 mV and output voltage of DC-DC converter is 1 V.
42264 研究了采用某款单片外延设备批量生长 8 英寸 ( 1 英寸 = 2. 54 cm) 薄层 Si 外延片时芯片性能参数的变化。 The performance parameter changes of the 8-inch (1 inch = 2.54 cm) thin-layer siliconepitaxial wafers processed with a single wafer epitaxial equipment during the mass production werestudied.
42265 研究发现随着设备预防性维护 ( PM) 后使用天数的增加，外延层厚度不均匀性变化很小，电阻率不均匀性逐渐增大，边缘过渡区逐渐加长， It is found that with the increase of days after preventive maintenance (PM) of the equipment, the thickness nonuniformity of the epitaxial layer changes little, the resistivity nonuniformity increasesgradually, and the edge transition region lengthens gradually.