| ID | 原文 | 译文 |
| 42236 | 偏置电路采用带负反馈系统的有源镜像结构实现，与传统的有源偏置结构相比，引入一个负反馈系统，提高了驱动能力，使电路更加稳定。 | The bias circuit was realizedby an active current mirror structure with a negative feedback system.Compared with traditional activebias structures, the introduction of a negative system can improve the driving capability and stability ofthe circuit. |
| 42237 | 电路采用+5 V 电源供电，静态工作电流为 130 mA。 | The amplifier adopts +5 V power supply while consuming 130 mA quiescent current. |
| 42238 | 该放大器在 860 ～ 960 MHz、2. 1 ～ 2. 2 GHz 和 2. 3 ～ 2. 7 GHz 性能良好，在2. 6 GHz 处的小信号增益为 14. 3 dB，1 dB 压缩点输出功率 ( Po( 1 dB) ) 为 28. 4 dBm，Po( 1 dB) 处的功率附加效率为 41. 6%，输出三阶交调点为 37. 5 dBm。 | The amplifier performs well in 860－960 MHz, 2.1－2.2 GHz and 2.3－2.7 GHz, and exhibits a small signalgain of 14.3 dB, an output power at 1 dB compression point (Po(1 dB)) of 28.4 dBm, a power added efficiency at Po(1 dB) of 41.6% and an output third order intercept point of 37.5 dBm at 2.6 GHz. |
| 42239 | 采用片外匹配，不仅节省芯片面积，还可以通过调整输入和输出匹配网络，满足 5G 基站等移动通信系统不同频段的应用需求。 | The adoption of external matching reduces the chip size, and can meet the application requirements of different frequency bands in 5G base station and other mobile communication systems by adjusting the input and output matching network. |
| 42240 | 对 GaN HEMT 瞬态结温测试中应用最广泛的 3 种光学测温技术进行了综述，分析了 3种光学测试技术的优势和局限性。 | Three kinds of optical temperature measurement techniques which are most widely used intransient junction temperature measurement of GaN HEMTs are reviewed, and the advantages andlimitations of these optical measurement techniques are analyzed. |
| 42241 | 红外测温技术测试速度快、效率高，适用于大批量产品的筛选测试等，但是其响应时间为 13～16 μs，可能由于无法及时捕捉到器件的峰值温度而低估瞬态结温; | Infrared temperature measurement technique has fast test speed and high efficiency, so it is suitable for screening tests of large quantities ofproducts.But its response time is 13－16 μs, so the transient junction temperature of the device may beunderestimated due to its inability to capture the peak temperature of the device in time. |
| 42242 | 微区拉曼光谱测温技术最佳时间分辨率为 10 ns，可以有效测量器件的瞬态结温特性， | The best temporalresolution of micro Ｒaman spectroscopy temperature measurement technique is 10 ns, which can effectivelymeasure the transient junction temperature characteristics of the device. |
| 42243 | 由于采用点测温模式，其测量速度较慢，且难以实现对峰值温度点的定位及测试; | But it adopts the point temperaturemeasurement mode, so that the measurement speed is slow, and it is difficult to locate and measure thepeak temperature point. |
| 42244 | 光热反射测温技术具有最高 800 ps 的时间分辨率，采用成像形式对器件进行瞬态结温测试，其测试速度介于红外和微区拉曼光谱测温技术之间。 | Thermoreflectance temperature measurement technique has a temporal resolution upto 800 ps and tests the transient junction temperature of the device by imaging.Its test speed is between that of the infrared and micro Ｒaman spectroscopy temperature measurement techniques. |
| 42245 | 随着光学测试技术的发展，不同测试技术的结合将为 GaN HEMT瞬态结温的准确测量提供更加优化的方案，以满足不同的测试需求。 | With the developmentof optical measurement techniques, the combination of different measurement techniques will provide moreoptimized schemes for the accurate measurement of transient temperature of GaN HEMTs to meet differentmeasurement requirements. |