ID 原文 译文
42216 开关特性得到了大幅改善，器件关断时漏极电压尖峰降低41 V，栅极电压尖峰降低 10 V。 A significant improvement on the switching characteristics with 41 V reduction of the drain voltage spike and 10 V reduction of the gate voltage spike during the process of switching off.
42217 该新型超级结 MOSFET 在国内晶圆制造平台上成功制作，获得了优异的器件性能。 The new superjunction MOSFET was manufactured in the domestic wafer foundry, and excellent device performanceswere obtained.
42218 在 300 W 有机发光二极管 ( OLED) 电视电源板上进行替代纵向双扩散MOSFET ( VDMOSFET) 的对比测试， The new superjunction MOSFET was tested on a 300 W power board of an organic lightemission diode (OLED) TV instead of a vertical double diffused MOSFET (VDMOSFET) .
42219 发现电源系统使用该新型超级结 MOSFET 比使用现有超级结 MOSFET，其电磁干扰 ( EMI) 性能改善了 4. 32 ～ 5. 8 dB;与使用 VDMOSFET 相比，在保持EMI 性能同等水平的同时，系统效率提高了 0. 52%。 It is found that the electromagnetic interference (EMI) performance of the power board using the new superjunctionMOSFET is 4.32 － 5.8 dB better than that of the power board using the conventional superjunctionMOSFET, and the system efficiency of the power board using the new superjunction MOSFET is improvedby 0.52% while keeping the same EMI characteristic level.
42220 基于双极型工艺设计了一种双通道轨到轨功率运算放大器， A dual-channel rail-to-rail power operational amplifier was designed based on bipolarprocess.
42221 其功能模块包括:基准偏置、输入级、中间级和输出级电路。 Its functional modules included the reference bias circuit, input stage, intermediate stage andoutput stage circuit.
42222 输入级电路采用两组 npn、pnp 型差分输入对管组成的轨到轨输入结构，配合电流开关电路实现输入级的跨导恒定; The input stage circuit adopted a rail-to-rail input structure composed of two sets ofnpn-and pnp-type differential transistor pairs, and cooperated with the current switching circuit to realizethe constant transconductance of the input stage.
42223 中间级电路选择电压跟随器结合电流跟随结构，实现将双端输入转为单端输出; The intermediate stage circuit choiced the voltage follower combined with the current following structure to realize the conversion from double-end input to single-ended output.
42224 输出级电路为具有 3 阶放大能力的 AB 类结构，实现轨到轨输出的同时提高电流放大能力; The output stage circuit was a class AB structure with third-order amplification capability, which achieved rail-to-rail output while improving the current amplification capability.
42225 芯片内还集成了电流检测、反向电流保护、静电放电( ESD) 保护等相关电路。 And the currentdetection, reverse current protection, electrostatic discharge (ESD) protection and other related circuitswere integrated in the chip.