ID 原文 译文
42206 有利于提高塑封微摄像头器件在湿热环境中的可靠性。 It is beneficial to improve the reliability of the plastic encapsulated micro-cameradevice in hygrothermal environments.
42207 基于 0. 15 μm GaN HEMT 工艺，设计并实现了一款超宽带毫米波 GaN 低噪声放大器( LNA) 微波单片集成电路 ( MMIC) 。 Based on 0.15 μm GaN HEMT process, a millimeter-wave ultra-broadband GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) was designed and fabricated.
42208 该放大器采用 4 级级联结构，其输入和输出端均采用 5 阶匹配网络，提高了放大器的匹配带宽; Afour-stage cascade structure was adopted in the amplifier, in which a fifth-order matching network wasused at input and output ports to expand the matching bandwith.
42209 由微带线、短截线和电容组成的无电阻输入匹配网络减小了输入热噪声，优化了电路的噪声系数; The input thermal noise was reduced andthe noise figure of the circuit was optimized by the non-resistance input matching network, which wascomposed of the microstrip-line, stub-line and capacitor.
42210 在级间匹配网络中引入电阻元件，通过降低 Q 值扩展电路工作带宽。 Some resistance elements were introduced intointer-stage matching networks to lower the Q value and thus to widen the operating bandwidth of the circuit.
42211 采用 SiC 衬底 0. 15 μm AlGaN/GaN HEMT 工艺进行流片，在片测试结果表明，在频率 14～34 GHz时，该 LNA 的增益为 ( 18±1) dB、噪声系数小于 4. 5 dB，在频率为 39 GHz时1 dB压缩点输出功率为 19 dBm，最大输入承受功率为 30 dBm，相对工作带宽大于 100%。 The LNA was fabricated by using 0.15 μm AlGaN/GaN HEMT technology on SiC subsrtate.The onwafer test results of the LNA show that in the frequency range of 14－34 GHz, the gain is (18±1) dB, the noise figure is less than 4.5 dB, the output power at the 1 dB compression point is 19 dBm at39 GHz, the maximum allowable input power is 30 dBm, and the relative operating bandwidth is greaterthan 100%.
42212 研制的 MMIC LNA 面积为 1. 71 mm2，功耗为 1. 05 W。 The area of the MMIC LNA is 1.71 mm2 and the power consumption is 1.05 W.
42213 提出了一种新型超级结 MOSFET 结构，通过优化 Si 表面漂移区的杂质分布以抑制器件的结型场效应管 ( JFET) 效应，改善器件特性。 A novel superjunction MOSFET structure was proposed, and the device performance wasimproved by optimizing the doping profile in the drift zone near Si surface and suppressing the junctionFET (JFET) effect.
42214 首先通过技术计算机辅助设计 ( TCAD) 模拟并对比了新型超级结 MOSFET 和现有超级结 MOSFET 的电场强度分布、栅漏耦合电容随漏极电压的变化和开关过程， The electric field strength distribution, the change of the gain-drain coupling capacitance with the drain voltage, and the switching process of the novel superjunction MOSFET and conventional superjunction MOSFET were simulated and compared by technology computer aided design(TCAD) .
42215 发现 600 V 新型超级结 MOSFET 比现有 600 V 超级结 MOSFET 的击穿电压提高了 15 V、比导通电阻减小约 3%， The simulation results show that compared with the 600 V convetional superjunction MOSFET, the 600 V new superjunction MOSFET has a 15 V higher breakdown voltage and 3% lower specific on-resistance.