ID 原文 译文
42176 在试验过程中，一种型号的低噪声放大器的驱动电流表现出先小幅度波动后快速下降，最终稳定基本不再变化的趋势。 During the test, the driving current of one type ofLNA shows a slight fluctuation at the early stage, then decreases rapidly, and stabilizes to a certain valueat last.
42177 对 GaAs MMIC 发生氢中毒的作用机理进行了详细地探讨和分析，认为 H 原子引起载流子浓度的减少和肖特基肖势垒高度的改变是导致参数退化的主要原因。 Degradation mechanisms of hydrogen poisoning in GaAs MMICs are discussed and analyzed in detail, and the decrease of carrier concentration and the changing of Schottky barrier height caused by Hatom are thought to be the main cause.
42178 最后，给出了几种降低电路因氢气氛暴露所引起的可靠性风险的方法。 Finally, approaches to reduce the reliability risk of circuits exposed in hydrogen ambient are proposed.
42179 将基于 InGaP /GaAs HBT 工艺的高线性功率放大器芯片、CMOS 控制芯片、输出匹配电路集成于双层基板，研制了一款工作在 S 波段的高效率、高谐波抑制功率放大器模组( MCM) 。 A power amplifier multi-chip module (MCM) with high efficiency and high harmonicsuppression working in S-band was developed, in which a high linearity power amplifier chip based onInGaP /GaAs HBT process, a CMOS controller chip, and output matching circuits were integrated on adouble-layer substrate.
42180 通过在输出匹配电路中引入多个 LC 谐振网络，抑制了输出信号的高次谐波分量，改善了放大器模组的线性度和效率。 By introducing several LC resonant networks into the output matching circuit, theharmonic component of the output signal is suppressed, and the linearity and efficiency of the amplifierMCM are improved.
42181 在电源电压 4 V、静态电流 220 mA、工作频率 1. 9 ～ 2. 1 GHz 条件下，其小信号增益大于 34. 3 dB，1 dB 压缩点输出功率大于 34. 3 dBm，功率附加效率大于44.2%，谐波抑制比小于－55. 0 dBc; Under the condition of a supply voltage of 5 V, a static current of 220 mA, and afrequency range of 1.9～2.1 GHz, the amplifier MCM achieves a small signal gain greater than 34.3 dB , an output power at 1 dB compression point greater than 34.4 dBm, an additional power efficiency greaterthan 44.2%, and a harmonic suppression ratio smaller than －55 dBc.
42182 采用 21. 6 kHz π/4 正交相移键控 ( QPSK) 方式调制信号，功率放大器模组输出功率为 34 dBm 时，其误差向量幅度 ( EVM) 小于 3. 1%，第一邻近信道功率比 ( ACPＲ1) 小于－31 dBc，第二邻近信道功率比 ( ACPＲ2) 小于－41 dBc。 Under 21.6 kHz π/4 quad-phaseshift keyed (QPSK) modulation, the power amplifier MCM exhibits an output power of 34 dBm, an errorvector magnitude (EVM) smaller than 3.1%, and a first adjacent channel power ratio (ACPＲ1) smallerthan －31 dBc, and a second adjacent channel power ratio (ACPＲ2) smaller than －41 dBc.
42183 该放大器模组可广泛应用于卫星通信等领域。 As a result, the amplifier MCM can be widely used in satellite communication and other fields.
42184 研究了以硅钛氧化物复合薄膜为绝缘层、并五苯为半导体层的有机场效应晶体管( OFET) ，其中硅钛氧化物复合薄膜采用溶胶－凝胶法制备。 The organic field-effect transistor (OFET) with silica-titania hybrid film as the dielectriclayer and pentacene as the semiconductor layer was studied.The silica-titania hybrid film was prepared bythe sol-gel method.
42185 采用傅里叶红外光谱仪、X 射线衍射仪、原子力显微镜和扫描电子显微镜对硅钛氧化物复合薄膜进行了测试和表征。 Fourier infrared spectrometer, X-ray diffractometer, atomic force microscope andscanning electron microscope were used to test and characterize the silica-titania hybrid film.