ID 原文 译文
42166 使用扫描电子显微镜对电化学定域性刻蚀方法制备的多孔 InP 进行表征和分析， A scanning electron microscope (SEM) wasused to characterize and analyze the porous InP prepared by electrochemical localized etching.
42167 研究了电流密度、掩模图形和刻蚀时间对定域性刻蚀制备的多孔 InP 结构的影响。 The influences of current density, mask pattern and etching time on the porous InP structure formed by ELEwere studied.
42168 电化学刻蚀过程中，分别利用掩模图形诱导刻蚀方向，改变电流密度调整孔隙大小和深度，改变刻蚀时间控制形成的多孔结构的深度。 During the electrochemical etching process, the mask pattern was used to induce theetching formation direction; the current density was changed to adjust the pore size and depth; theetching time was changed to control the depth of the formed porous structure, respectively.
42169 采用电化学定域性刻蚀与电子束光刻技术相结合，在 InP 衬底上制备具有光学传输特性的光波导结构。 The influences of current density, mask pattern and etching time on the porous InP structure formed by ELEwere studied.The patternmask technology with electrochemical localized etching and electron beam lithography were used to fabricate the optical waveguide structure with optical transmission function.
42170 反射率测试结果表明，采用波长 900 nm 的入射光，多孔结构具有导波模式。 The reflectivity test results showthat guided mode is achieved from the porous structure with incident light wavelength of 900 nm, the lossof the porous waveguide structure with a length of 500 μm is about 9.
42171 使用 500 μm 长的 InP 多孔结构所制备波导的损耗约为 9. 92 dB /cm。 92 dB /cm.
42172 多孔结构 InP 光波导在光子集成领域具有较好的应用价值和前景。 The porous InP opticalwaveguide has good application value and prospect in the field of photonic integration.
42173 对基于 GaAs 异质结外延材料、0. 15 μm PHEMT 工艺制造的国产低噪声放大器( LNA) 和驱动放大器 ( DA) 各 3 种型号的 GaAs 微波单片集成电路 ( MMIC) 进行了温度为150 ℃、H2 体积分数为 2%、时间为 100 h 的氢气氛暴露试验。 Hydrogen exposure test for two kinds of domestic GaAs monolithic microwave integratedcircuits (MMICs) at 150 ℃ for 100 h in 2% (volumn fraction) hydrogen forming gas ambient was carried out.The MMICs selected were three types in each of the low noise amplifiers (LNAs) and driver amplifiers (DAs) which were fabricated on GaAs heterostructure epitaxial material with 0.15 μm PHEMTprocess.
42174 试验结果表明，低噪声放大器和驱动放大器对氢气氛较为敏感， The test results show that both of the LNAs and DAs are sensitive to the hydrogen ambient exposure.
42175 试验后线性增益、1 dB 压缩点输出功率和驱动电流均发生了不同程度的退化，表现出氢中毒效应。 Parameters of linear gain, output power at 1 dB compression point and driving current degrade to different degrees, showing hydrogen poisoning effects.