| ID | 原文 | 译文 |
| 42156 | 基于硅通孔 ( TSV) 结构的系统级封装 ( SiP) 模块内部存在多个微焊点层， | There are several micro-solder layers in a system in package (SiP) module based onthrough silicon via (TSV) structure. |
| 42157 | 数量众多的微焊点与模块尺寸差异较大，使得建模时网格划分困难和仿真计算效率低。 | The greatly different size between the numerous micro-solder ballsand the module leads to difficulty of grid division during modeling and low efficiency of simulation calculation. |
| 42158 | 研究了 TSV 结构微焊点层的均匀化等效建模方法， | The homo-genization equivalent modeling method for micro-solder layers of TSV structure was studied. |
| 42159 | 以 TSV 结构内的芯片微焊点层作为研究对象，通过仿真和理论计算其等效导热系数、等效密度和等效比热容等热特性参数， | The chip micro-solder layer in the TSV structure was taken as the research object and its thermalcharacteristic parameters such as equivalent thermal conductivity, equivalent density and equivalent specific heat capacity were calculated through simulation and theory. |
| 42160 | 建立 SiP 模块的详细模型和等效模型进行仿真分析， | The detailed model and equivalentmodel of the SiP module were established for simulation analysis. |
| 42161 | 并基于瞬态双界面测量方法测出 SiP 模块的结壳热阻值， | Then the thermal resistance between thejunction and the case of the SiP module was measured based on the transient double interface measurement method. |
| 42162 | 再对比分析详细模型和等效模型的仿真热阻值和测量偏离值。 | The simulated thermal resistance and measuring deviation between the detailed model and the equivalent model were compared and analyzed. |
| 42163 | 结果表明:围绕微焊点层结构的均匀化等效建模方法具有较高的仿真准确度，且计算效率显著提高， | The results show that the homogenization equivalentmodeling method of the micro-solder layer has high simulation accuracy, and computational efficiency issignificantly improved. |
| 42164 | 适用于复杂封装结构模块的热仿真分析。 | The homogenization equivalent modeling method is suitable for thermal simulationanalysis of complex package structure modules. |
| 42165 | 采用电子束光刻技术与电化学定域性刻蚀技术制备了多孔 InP 光波导。 | The porous InP optical waveguide was fabricated using electron beam lithography (EBL)and electrochemical localized etching (ELE) technology. |