ID 原文 译文
42146 介绍了金刚石功率电子学的最新进展，如金刚石单晶、金刚石化学气相沉积同质和异质单晶外延、金刚石多晶外延、金刚石二极管、金刚石 MOSFET、金刚石结型场效应晶体管、金刚石双极结型晶体管、金刚石逻辑电路、金刚石射频场效应晶体管和金刚石上 GaN HEMT等。 The latest developments of diamondpower electronics are introduced, such as diamond single crystal, diamond chemical vapor depositionhomogeneous and heterogeneous epitaxial single crystal, polycrystalline diamond epitaxial, diamonddiode, diamond MOSFET, diamond junction field-effect transistor, diamond bipolar junction transistor, diamond logic circuit, diamond ＲF field-effect transistor and GaN-on-diamond HEMT, and so on.
42147 还介绍了金刚石材料的大尺寸、低缺陷和 p 型及 n 型掺杂等制备技术，金刚石新器件结构设计，金刚石新器件工艺，转移掺杂 H 端－金刚石沟道和金刚石/GaN 界面热阻等研究成果。 The research results are also introduced, including the preparation technologies of the large size, low defectdiamond material and p-type and n-type doping, the structure design of the diamond new device, theprocess technology of the diamond new device, transfer of doping H-diamond channel and diamond /GaNinterface thermal resistance.
42148 分析了金刚石功率电子学的发展由来、关键技术突破和发展态势。 The development origin, key technology breakthrough and development trendof diamond power electronics are analyzed.
42149 为研究碰撞电离雪崩渡越时间 ( IMPATT) 二极管的温度特性，采用 Sentaurus 软件设计了晶格匹配的 In0. 17Al0.83N/GaN 异质结 IMPATT 二极管二维结构， To investigate the temperature characteristics of the impact ionization avalanche transittime (IMPATT) diode, a two-dimensional structure based on lattice-matched In0. 17Al0.83N/GaN heterojunction was designed by using Sentaurus software.
42150 利用漂移－扩散模型研究了温度对二极管直流及高频特性的影响， The drift-diffusion model was used to study theinfluence of temperature on DC and high frequency characteristics of the diode.
42151 并与 GaN 同质结 IMPATT 二极管的温度特性进行了比较。 Then, the temperaturecharacteristics of the heterojunction diode were compared with the GaN homostructure IMPATT diode.
42152 结果表明，温度升高时 IMPATT 二极管的击穿电压增大，使异质结和同质结 IMPATT 二极管的射频输出 功 率 密 度 分 别 由 300 K 时 的 1. 62 MW/cm2 和 1. 24 MW/cm2 增 大 至 500 K 时 的1. 79 MW/cm2和 1. 42 MW/cm2。 Thesimulation results indicate that the breakdown voltage of the IMPATT diode increases with the increase oftemperature, which leads to the ＲF output power densities of the heterojunction and homostructure IMPATT diodes increase from 1.62 MW/cm2 and 1.24 MW/cm2 at 300 K to 1.79 MW/cm2 and1.42 MW/cm2 at 500 K, respectively.
42153 温度升高时二极管雪崩区宽度增大，导致异质结和同质结IMPATT 二极管的直流－射频转换效率分别由 300 K 时的 15. 4% 和 12. 1% 降低至 500 K 时的14. 2%和 10. 7%。 The width of the avalanche region widens with the increase of temperature, which leads to the DC-to-ＲF conversion efficiencies of the heterojunction and homostructureIMPATT diodes decrease from 15.4% and 12.1% at 300 K to 14.2% and 10.7% at 500 K, respectively.
42154 相比之下，In0. 17Al0.83N/GaN 异质结 IMPATT 二极管更适合高温工作， In contrast, the lattice-matched In0.17Al0.83N/GaN heterojunction IMPATT diode is more suitable for hightemperature work.
42155 取得的研究数据可用于指导毫米波大功率 InAlN/GaN 异质结 IMPATT 二极管的设计。 The obtained research data can be used to guide the design of millimeter-wave highpower InAlN/GaN heterojunction-based IMPATT diode