ID 原文 译文
42136 结果表明，在 3. 3 V 电源和 27 ℃ 室温条件下，输出基准电压的平均值为 765. 7 mV，功耗为 0. 75 μW; The results show that under the conditions of 3.3 V power supply and 27 ℃ room temperature, the average value of the output reference voltage is 765.7 mV, and the power consumption is0.75 μW.
42137 在温度为－ 55 ～ 125 ℃ 时，温度系数为6.85×10－6 /℃。 At the temperature of －55－125 ℃, the temperature coefficient is 6.85×10－6 /℃ .
42138 此外，输出基准电压受电源纹波的影响较小，1 kHz 时的 PSＲＲ 为－65. 3 dB。 In addition, the output reference voltage is less affected by the power ripple, the PSＲＲ is －65.3 dB at 1 kHz.
42139 ZnO 是一种带隙宽度约为 3. 0 eV 的Ⅱ-Ⅵ族 n 型半导体材料，其具有优异的光学性能、压电性能和电化学性能，广泛应用于传感器、太阳电池和催化净化等领域。 ZnO is a Ⅱ-Ⅵ n-type semiconductor material with a band gap width of about 3.0 eV.Ithas excellent optical, piezoelectric and electrochemical properties, and is widely used in sensors, solarcells, catalytic purification and other fields.
42140 介绍了目前纳米ZnO 的主要制备方法，包括水热法、电化学沉积法和磁控溅射法， The main preparation methods of nano-ZnO are introduced, including hydrothermal method, electrochemical deposition method and magnetron sputtering method.
42141 分析对比了每种制备方法的优缺点。 The advantages and disadvantages of each preparation method are analyzed and compared.
42142 着重介绍了纳米 ZnO 材料在气体、生物以及光电传感器领域的研究进展，概括了制约纳米 ZnO 传感器件发展的影响因素。 The research progress of nano-ZnO materials in the fields of gas, biology and photoelectric sensor is introduced emphatically, and the influencing factors restricting the development of the nano-ZnO sensor are summarized.
42143 高性能纳米 ZnO 材料不仅在传感领域将会有良好的应用前景，而且能促进光电、医疗以及工业生产等行业的快速发展。 The nano-ZnO materials with high performance have a good application prospect in the field of sensing, andcan promote the rapid development of industries such as photoelectric, medical and industrial production.
42144 最后，对纳米 ZnO 传感器目前所面临的挑战和未来的发展趋势进行了展望和总结。 Finally, the current challenges and future development trends of nano-ZnO sensors are prospected andsummarized.
42145 以 SiC /GaN 为代表的第三代半导体功率电子学已成为当今功率电子学创新发展的主流，超宽禁带半导体金刚石功率电子学将有可能成为下一代固态功率电子学的代表，受到研究人员的广泛关注。 The third generation of semiconductor power electronics represented by SiC /GaN has become the mainstream of innovation and development of power electronics.Ultra wide bandgap semiconductor diamond power electronics will probably become the representative of the next generation of solidstate power electronics, and will be widely concerned by researchers.