ID 原文 译文
42096 发现两种不同的退火条件都会导致 TiN/HfO2 / SiO2 /Si 电容结构平带电压的正向漂移， It is found that two different annealing conditions lead to the positive shift of the flat-band voltage of the TiN/HfO2 /SiO2 /Sicapacitor structure.
42097 基于退火对其电荷分布的影响研究，此正向漂移主要来源于退火导致的 HfO2 /SiO2 界面的界面偶极子的增加。 Based on the study of the effect of annealing on its charge distribution, the positiveshift of the flat-band voltage is mainly due to the increase of interface dipoles at the HfO2 /SiO2 interfacecaused by annealing.
42098 介绍了一款高压高功率 GaN 功率器件及其匹配电路。 A high voltage and high power GaN power device and its matching circuit wasintroduced.
42099 基于国内高压 GaN 高电子迁移率晶体管 ( HEMT) 的研究基础，选取了 GaN HEMT 芯片，确定了器件的总栅宽。 Based on the research foundation of domestic high voltage GaN high electron mobility transistor (HEMT) , the GaN HEMT chip was selected and the total gate width of the device was determined.
42100 根据 GaNHEMT 芯片阻抗，器件内部进行了 LC 谐振匹配设计，外部采用双边平衡同轴巴伦进行推挽匹配设计。 According to the impedance of GaN HEMT chip, the LC resonance matching design was carried outinside the device.While the bilateral balanced coaxial balun and push-pull circuit was used in the outsidematching network.
42101 散热方面通过改善封装管壳热沉材料提高热导率。 In the aspect of heat dissipation, the thermal conductivity was improved by enhancingthe heat sink material of the package.
42102 最终成功研制出高压、3 kW 的 GaN 功率器件，该器件在工作电压为 60 V、工作频率为 0. 35 ～ 0. 45 GHz、脉宽为 300 μs、占空比为10%条件下，频带内输出功率大于 3 kW、功率增益大于 16 dB、功率附加效率大于 71%、抗负载失配能力不小于 10 ∶ 1。 Finally, a high-voltage 3 kW GaN power device was successfullydeveloped.The device shows an output power of more than 3 kW, a power gain of more than 16 dB and apower added efficiency of more than 71% in the band of 0.35－0.45 GHz under the conditions of 60 Vworking voltage, 300 μs pulse width and 10% duty cycle.The load mismatch capability of the device isnot less than 10 ∶ 1.
42103 针对 CMOS 器件随着技术节点的不断减小而产生的短沟道效应和漏电流较大等问题，设计了一种新型直肠形鳍式场效应晶体管 ( FinFET) ， In order to solve the problems of the short channel effect and the large leakage current ofCMOS devices caused by the decrease of technology nodes, a new rectzoidal fin field effect transistor(FinFET) was designed.
42104 并将该新型器件与传统的矩形结构和梯形结构的 FinFET 通过 Sentaurus TCAD 仿真软件进行对比。 The new device was compared with the traditional rectangular structure andtrapezoidal structure FinFETs by using Sentaurus TCAD simulation software.
42105 结果表明，当栅极长度控制在 10 nm 时，新型器件相比于另外两种传统的 FinFET 具有更小的鳍片尺寸，且鳍片高度不低于抑制短沟道效应的临界值。 The results show that whenthe gate length is controlled at 10 nm, the new device has a smaller fin size than the other two traditionalFinFETs, and the fin height is hot lower than the critical value to suppress the short channel effect.