ID 原文 译文
42076 证实该方法用于自加热效应的测试是准确有效的，能为建立准确的器件模型提供数据支撑。 It is proved that this test method isaccurate and effective for testing self-heating effects and can provide data support for establishing accuratedevice models.
42077 采用该方法对 2 μm SOI 工艺不同宽长比的 NMOSFET 进行测试，结果表明栅宽相同的器件，栅长越短，自加热现象越明显。 The self-heating effects of NMOSFETs with different aspect ratios in 2 μm SOI processwere tested by the method. The results show that for devices with the same gate width, the shorter the gatelength, the more obvions the self-heating phenomenon.
42078 针对晶圆级导通电阻测试误差过高，满足不了低压金属氧化物半导体场效应晶体管( MOSFET) 毫欧级导通电阻的测试精度要求，给产品晶圆测试规范的制定及品质监控带来困扰的问题，提出了晶圆级导通电阻测试精度的改进方法。 In view of the problem that the test error of wafer level on-resistance was too high to meetthe milliohm level on-resistance test accuracy requirements of low-voltage metal oxide semiconductor field effect transistor (MOSFET) , which brought troubles to the formulation of product wafer test specificationand quality control, the improvement methods of wafer level on-resistance test accuracy were proposed.
42079 基于开尔文法电阻测试理论，具体分析了晶圆级导通电阻测试原理， Based on the theory of Kelvin method for resistance test, the test principle of wafer level on-resistance wasconcretely analyzed.
42080 且得出其测试精度不高的根本原因是减薄背金后粗糙不平的硅片背面与测试机的承片台的非充分接触而引入了毫欧级接触电阻。 The primary reason of its low test accuracy was that the milliohm level contact resistance caused by the inadequate contact between rough backside of Si wafer after back grinding and backmetal and the CP tester chuck.
42081 提出 3 种相应改进测试精度的方法，单相邻芯片辅助的测试方法、双相邻芯片辅助的测试方法和正面漏极测试窗的测试方法。 Three methods for improving the test accuracy were proposed, singleneighbor chips test mode, double neighbor chips test mode and top drain test pads mode.
42082 经过验证，3 种方法均能将毫欧级导通电阻测试误差控制到小于 10%，实现低压 MOSFET 晶圆级导通电阻参数的有效监测。 After verification, the test error of milliohm on-resistance can be controlled to less than 10% by the three methods, and the effective monitoring of wafer level on-resistance parameters of low-voltage MOSFET is realized.
42083 高密度陶瓷封装倒装焊器件的焊点尺寸已降低至 100 μm 以下，焊点电流密度达到104 A /cm2 以上， Solder joint size of the high density ceramic flip-chip device has reduced to below 100 μm, and the current density in the solder joint reaches above 104 A/cm2.
42084 由此引发的电迁移失效成为不可忽视的问题。 Therefore, the electromigration failurecaused by this problem can't be ignored.
42085 以陶瓷封装菊花链倒装焊器件为研究对象，开展了 Sn10Pb90、Sn63Pb37 焊点热电环境可靠性评估试验， The ceramic daisy-chain flip-chip device was taken as the research object, and the reliability evaluation experiment under thermoelectric environment was carried out forSn10Pb90 and Sn63Pb37 solder joints.