ID 原文 译文
42046 认为 TSV 抛光液应朝着抛光速率和抛光质量的优化、低成本、环境友好的方向发展。 It is believed that the TSV slurry should be developed in the directionof optimization of the polishing rate and polishing quality, low cost and environmental friendliness.
42047 基于 0. 25 μm GaAs 增强/耗尽型 ( E /D 模) 赝配高电子迁移率晶体管 ( PHEMT) 工艺，设计并实现了一款集成了并行驱动器的多功能单片微波集成电路 ( MMIC) 芯片。 A multifunction monolithic microwave integrated circuit (MMIC) chip integrated with theparallel driver was designed and implemented based on 0. 25 μm GaAs enhancement / depletion (E /Dmode) pseudomorphic high electron mobility transistor (PHEMT) process.
42048 该芯片的移相器采用磁耦合全通网络 ( MCAPN) 结构，功率分配器则使用集总元件进行集成，不仅缩小了芯片面积，并且在超宽带下实现了较好的相位精度和幅度一致性。 The phase shifter of the chipadopted the magnetically coupled all-pass network (MCAPN) structure, and the power divider was integrated with some lumped elements, which reduced the chip size and realized better phase accuracyand amplitude consistency under ultra-wideband.
42049 采用微波探针台对芯片进行在片测试， The chip was tested on wafer with a microwave probestation.
42050 结果表明在 0. 5 ～ 2. 7 GHz，芯片性能良好: The results show that in the frequency range of 0. 5－2. 7 GHz, the chip exhibits excellent performance:
42051 其小信号 ＲF 输入功率为0 dBm，芯片的插入损耗不大于 7 dB，幅度波动在 ± 0. 8 dB 以内，相位差为 － 98° ～ － 85°，输入电压驻波比( VSWＲ) 不大于 1. 9 ∶ 1，输出 VSWＲ 不大于 1. 9 ∶ 1， the small signal ＲF input power is 0 dBm, the insertion loss is not more than 7 dB, the amplitude error is within ± 0. 8 dB, the phase difference is from － 98° to － 85°, the input voltagestanding wave ratio (VSWＲ) is not more than 1. 9 ∶ 1, and the output VSWＲ is not more than1. 9 ∶ 1.
42052 在－5 V 电源下驱动器的静态电流为 1 mA，响应速度为 25 ns。 Under －5 V supply voltage, the static current of the driver is 1 mA and the response speed is25 ns.
42053 芯片尺寸为 3. 4 mm×1. 8 mm。 The chip size is 3. 4 mm×1. 8 mm.
42054 该电路具有响应速度快、功耗低、集成度高等特点，可应用于多波束天线系统中。 The circuit has the characteristics of fast response, low powerconsumption, high integration, etc, and can be widely used in the multi-beam antenna system.
42055 基于 SiC 衬底 0. 25 μm GaN HEMT 工艺，设计实现了一款 C 波段、高效率和高线性的单片微波集成电路 ( MMIC) 功率放大器。 Based on the SiC substrate 0.25 μm GaN HEMT process, a C band high efficiency andlinearity monolithic microwave integrated circuit (MMIC) power amplifier was designed and implemented.