ID 原文 译文
42036 使用该方法制作的 UV LED 芯片在经过长时间老化后，其漏电流可以保持在 1 nA 以下，综合性能大幅提升。 The leakage current of the UV LED chip produced by this methodmaintains below 1 nA after long-term aging, and the overall performance is greatly improved.
42037 采用电感耦合等离子体 ( ICP) 刻蚀系统，研究了氧等离子体表面处理对 AlGaN /GaNHEMT 欧姆接触电阻的影响。 The impact of oxygen plasma surface treatment on ohmic contact resistance of AlGaN /GaN HEMTs was studied by inductively coupled plasma (ICP) etching system.
42038 利用能量色散 X 射线光谱仪、光致发光谱和原子力显微镜以及电学测试设备对处理前后样品进行表征分析。 The samples before andafter treatment were characterized and analyzed by energy dispersive X-ray spectroscopy, photoluminescence spectrum, atomic force microscopy and electrical testing equipment.
42039 结果表明，在最佳的氧等离子体处理条件 ( ICP 功率250 W，射频功率 60 W，压强 0. 8 Pa，氧气流量 30 cm3 /min，时间 5 min) 下，欧姆接触电阻为0.41 Ω·mm，比参照样品接触电阻降低了约 69%。 The results show that underthe optimal oxygen plasma treatment condition (ICP power of 250 W, ＲF power of 60 W, pressure of0.8 Pa, O2 flow of 30 cm3 /min, time of 5 min) , the ohmic contact resistance is 0.41 Ω·mm, whichis about 69% lower than that of reference samples.
42040 分析认为经过氧等离子体处理后，在近表面处产生了一定数量的 N 空位缺陷，这些 N 空位表现为浅能级施主掺杂，有利于欧姆接触的形成。 Analysis shows that a certain number of N vacancy defects are generated near the surface after oxygen plasma treatment, and the N vacancy appears as shallowlevel donor doping, which is beneficial to the formation of ohmic contact.
42041 通过采用氧等离子体表面处理工艺制备的 AlGaN /GaN HEMT，在+ 2 V 的栅极偏压下获得了0.77 A /mm的最大漏极饱和电流。 The maximum drain saturationcurrent of the AlGaN /GaN HEMT fabricated by oxygen plasma surface treatment is 0.77 A /mm at +2 Vgate bias.
42042 硅通孔 ( TSV) 技术是一种先进的封装技术，化学机械抛光 ( CMP) 是集成电路 TSV制作过程中的重要步骤之一，是可兼顾材料表面局部和全局平坦化的技术。 Through silicon via (TSV) technology is an advanced packaging technology.Chemicalmechanical polishing (CMP) is one of the important steps in the manufacturing process of integrated circuit TSV, and is a technology that can take into account the local and global planarization of materialsurface.
42043 抛光液是影响抛光表面质量和加工效率的关键因素，是 CMP 工艺中消耗品成本最大的部分。 Slurry is a critical factor affecting the quality of the polished surface and processing efficiency, and has become the most of the CMP process consumables cost.
42044 TSV 抛光液主要包括铜膜抛光液和阻挡层抛光液，依据抛光速率和抛光质量 ( 表面粗糙度、碟形坑修正等) 的要求对其进行了分类讨论， TSV slurries mainly include copper filmslurry and barrier layer slurry.They are classified and discussed according to the requirements of polishing rate and polishing quality (surface roughness, dishing pit modification, etc.) .
42045 概述了近年来 TSV 抛光液的研究进展，对其今后的研究重点和发展趋势进行了分析和预测， The research progress of TSV slurries in recent years are reviewed, and the future research emphasis and developmenttrends are analyzed and forecasted.