ID 原文 译文
42026 IGBT 模块一般采用多芯片并联的方式进行封装，但由于模块参数、驱动控制等差异，模块内部存在电流分布不均衡的问题。 IGBT modules are generally packaged with multiple chips in parallel. However, due todifferences in module parameters, drive control and other factors, the current distribution in the moduleis imbalanced.
42027 相比于稳态电流分布，瞬态电流分布的影响因素众多，是研究的热点。 Compared with the steady-state current distribution, the transient current distribution isaffected by many factors, which is a hot research topic.
42028 针对 IGBT 的芯片参数开展了模块内部各支路瞬态电流分布特性的研究。 Based on the IGBT chip parameters, theresearch on the transient current distribution characteristics of each branch inside the module was carriedout.
42029 通过建立IGBT 芯片模型及芯片并联的瞬态电路分析模型，计算单一芯片参数与多种芯片参数作用下 IGBT模块的瞬态电流分布，提出新的适用于芯片支路瞬态均流分析的评价指标，得到了 IGBT 芯片参数对并联瞬态均流影响的规律。 The transient current distribution of the IGBT module under the changes of a single chip parameterand multiple chip parameters was calculated by establishing the IGBT chip model and the transient circuitanalysis model of the chip in parallel, a new evaluation index suitable for transient current sharinganalysis of chip branches was proposed, and the law of the influence of IGBT chip parameters on paralleltransient current sharing was obtained.
42030 研究结果表明阈值电压、跨导和栅极电阻是对瞬态均流影响最大的 3 个芯片参数，且需要关注阈值电压与跨导的共同影响。 The research results show that threshold voltage, transconductanceand gate resistance are the three chip parameters that have the greatest impact on transient currentsharing, and the combined effect of threshold voltage and transconductance should be given attention.
42031 研究结果对 IGBT 的芯片筛选及并联后的瞬态均流计算具有指导意义。 The research results have guiding significance for the selection of IGBT chips and the calculation of transientcurrent sharing after parallel connection.
42032 着重对紫外 ( UV) LED 芯片的反向漏电进行研究，使用高 Al 组分的 AlGaN 材料作为 LED 外延结构中的电子阻挡层 ( EBL) ，旨在解决 UV LED 芯片在老化后的漏电问题。 The reverse leakage of ultraviolet (UV) LED chips was emphatically studied.AlGaNmaterial with high Al composition was used as the electron blocking layer (EBL) in the LED epitaxialstructure to solve the problem of the leakage of UV LED chips after aging.
42033 结果表明，高 Al 组分的 AlGaN EBL 凭借其足够高的势垒高度，可以有效降低电子泄漏水平，从而改善UV LED 芯片在老化后的反向漏电问题。 The results show that theAlGaN EBL with high Al composition can effectively reduce the level of electron leakage by virtue of itssufficiently high barrier height, thereby improving the reverse leakage of UV LED chips after aging.
42034 选取 365 ～ 415 nm 波段、量子阱禁带宽度为 3. 0 ～ 3. 4 eV的外延片为研究对象，研究了 EBL 工艺对老化后芯片漏电性能的影响， The epitaxial wafer with wavelength of 365－415 nm and bandgap width of the quantum well of 3. 0－3. 4 eVwas selected as the research object to study the influence of the EBL process on the leakage performanceof the chip after aging.
42035 得到 AlGaN EBL 的最佳Al 组分为 30% ～ 40%，对应禁带宽度为 4. 0 ～ 4. 3 eV。 The optimal Al composition of the AlGaN EBL is 30%－40%, and the corresponding bandgap width is 4. 0－4. 3 eV.