ID 原文 译文
42016 采用应力仿真软件对外壳进行结构设计，利用电磁仿真软件对该外壳的射频端口进行仿真优化。 The stress simulation software was used to design the package structure, and theelectromagnetic simulation software was used to simulate and optimize the ＲF port of the package.
42017 采用微带线直接穿墙形式，设计了共面波导－带状线－共面波导的射频传输结构，并与陶瓷外壳进行一体化设计和制作。 The ＲFtransmission structure of coplanar waveguide-stripline-coplanar waveguide was designed by using themicrostrip line directly through the package, and it was integrated with the ceramic package.
42018 利用 GSG 探针对外壳样品进行测试， The GSGprobe was used to test the package sample.
42019 实测结果表明，在 0 ～ 12 GHz频段内，外壳射频端口的插入损耗不小于－0. 5 dB，回波损耗不大于－15 dB， The measured results show that the insertion loss of thepackage ＲF port is not less than －0. 5 dB and the return loss is not more than －15 dB in the 0－12 GHzfrequency band.
42020 AlN 一体化外壳尺寸为10.25 mm×16. 25 mm×4 mm，可广泛应用于高频高速信号一体化封装领域。 The AlN integrated package size is 10. 25 mm×16. 25 mm×4 mm, which can be widelyused in the field of high frequency and high speed signal integrated packaging.
42021 氢化物气相外延 ( HVPE) 法具有生长成本低、生长条件温和、生长速率快等优点，被认为是生长高质量 GaN 单晶衬底的最有潜力的方法。为了优化 HVPE 生长 GaN 的条件，通过改变 NH3流量调控Ⅴ/Ⅲ比 ( NH3 流量与 HCl 流量之比) 。 Hydride vapor phase epitaxy (HVPE) method is the most promising approach to growhigh quality GaN single crystal substrate for its low cost, mild growth condition and fast growth rate, etc. Ⅴ/Ⅲ ratio (the ratio of NH3 flow rate and HCL flow rate) was controlled by changing the NH3 flowrate in order to optimize the conditions for growing GaN by HVPE.
42022 通过建立简单的生长模型，对不同Ⅴ/Ⅲ比下 GaN 薄膜形态变化的机理进行了分析， The mechanism of morphological changes under different Ⅴ/Ⅲ ratios was analyzed by establishing a simple growth model.
42023 研究了 HVPE 生长过程中氮源 ( Ⅴ族) 和镓源( Ⅲ族) 不同流量比对结晶质量和表面形貌的影响。 The influences of different flow ratios of nitrogen source (group Ⅴ) and gallium source (group Ⅲ) on crystal quality andsurface morphology of GaN thin films prepared by HVPE were studied.
42024 实验结果表明，低Ⅴ/Ⅲ比会导致成核密度低，岛状晶胞难以合并;高Ⅴ/Ⅲ比会降低表面 Ga 原子的迁移率，导致表面高度差异大，结晶质量差。 Test results show that low Ⅴ/Ⅲratio leads to low nucleation density, and island cells are hard to merge; high Ⅴ/Ⅲ ratio reduces themobility of surface Ga atom, resulting in large difference in surface height and poor crystal quality.
42025 与Ⅴ/Ⅲ比为 15. 000 和 28. 125 相比，Ⅴ/Ⅲ比为 21. 250 时更适合 GaN 薄膜生长，得到的晶体质量最高。 TheⅤ/Ⅲ ratio of 21. 250 is the most suitable condition for GaN thin film growth, and the crystal quality isthe highest compared with those at the Ⅴ/Ⅲ ratios of 15. 000 and 28. 125.