ID 原文 译文
41996 通常 PMOSFET 栅源电压为－20～20 V，而用于 GaN 功率放大器的高压 PMOSFET 驱动器，其工作电压为 28～50 V，因此需要一种新型电路结构来保证 PMOSFET 栅源电压工作在额定范围。 The gate-source voltage of most PMOSFETs is from －20 V to 20 V, while the high voltage PMOSFET drivers for GaN power amplifier operate at 28 － 50 V, so a novel circuit structure isneeded to ensure the gate-source voltage operating in the rated voltage range.
41997 设计了一种新型电压跟随电路，采用新型多环路负反馈结构，核心电路主要为电压基准单元、减法器单元、误差放大器单元和采样单元，可产生稳定的跟随电压。 A novel voltage followingcircuit with the multi-loop negative feedback structure was designed, and the core circuit mainlyconsisted of voltage reference unit, subtractor unit, error amplifier unit and sampling unit.
41998 该电路具有宽电源电压范围、高输出稳定性以及低温度漂移等特性。 The designed circuit can generate stable following voltages, and has a wide power supply voltage range, high outputstability and low temperature drift.
41999 基于 0. 5 μm BCD 工艺对电路进行流片，测试结果表明，采用该电路的驱动器芯片，其电源电压为 15 ～ 50 V，输出电压变化量约为 0. 6 V，在－55～125 ℃温度范围内，电压漂移量约为 0. 12 V，满足大多数 PMOSFET 栅源电压的应用要求。 The circuit was taped out based on 0.5 μm BCD process.The testresults show that the driver chip using the designed circuit operates properly at the power supply voltagesof 15－50 V, the output voltage variation is about 0.6 V and the voltage drift is about 0.12 V in the temperature range of －55－125 ℃, which meets the application requirments of gate-source voltage of mostPMOSFETs.
42000 研制了一款 60～90 GHz 功率放大器单片微波集成电路 ( MMIC) ， A 60－90 GHz power amplifier monolithic microwave integrated circuit (MMIC) was researched and developed.
42001 该 MMIC 采用平衡式放大结构，在较宽的频带内获得了平坦的增益、较高的输出功率及良好的输入输出驻波比( VSWＲ) 。 The MMIC adopted a balanced amplifier structure to achieve flat gain, higheroutput power and good input and output voltage standing wave ratio (VSWＲ) in a wide frequency band.
42002 采用 GaAs 赝配高电子迁移率晶体管 ( PHEMT) 标准工艺进行了流片， The MMIC was fabricated with GaAs pseudomorphic high electron mobility transistor (PHEMT) standard process.
42003 在片测试结果表明，在栅极电压为－0. 3 V、漏极电压为+3 V、频率为 60 ～ 90 GHz 时，功率放大器 MMIC 的小信号增益大于 13 dB，在 71～76 GHz 和 81 ～ 86 GHz 典型应用频段，功率放大器的小信号增益均大于15 dB。 The on-wafer test results show that the small-signal gain of the power amplifier MMIC is higherthan 13 dB from 60 GHz to 90 GHz, and even higher than 15 dB both in 71－76 GHz and 81－86 GHz, when the gate voltage is －0.
42004 载体测试结果表明，栅极电压为－0. 3 V、漏极电压为+3 V、频率为 60 ～ 90 GHz 时，该功率放大器 MMIC 饱和输出功率大于 17. 5 dBm， 3 V and the drain voltage is +3 V. The on-carrier test results show that thesaturate output power of the power amplifier MMIC is higher than 17.5 dBm, when the gate voltage is－0.3 V and the drain voltage is +3 V from 60 GHz to 90 GHz.
42005 在 71 ～ 76 GHz 和 81 ～ 86 GHz 典型应用频段，其饱和输出功率可达到20 dBm。 In the typical application frequency bandsof 71－76 GHz and 81－86 GHz, the saturate output power reaches 20 dBm.