ID 原文 译文
41986 并选取 6 组相同线性能量传递 ( LET) 值、不同能量的离子 ( 11B 与4He、28Si 与19F、58Ni 与27Si、 86Kr与40Ca、107Ag 与74Ge、181Ta 与132Xe) 进行蒙特卡洛仿真。 Six groups of ions with the same linear energy transfer (LET) values and different energies (11B and 4He, 28Si and 19F, 58Ni and 27Si, 86Kr and 40Ca, 107Ag and 74Ge, 181Ta and 132Xe) were selected for Monte Carlosimulations.
41987 结果表明，对于 2 层堆叠的 TSV 3D封装 SＲAM，低能离子入射时，在 Si 路径下，下堆叠层 SＲAM 多位翻转率比上堆叠层高，在 TSV( Cu) 路径下，下堆叠层 SＲAM 多位翻转率比 Si 路径下更大; The results show that for the two-die stacked TSV 3D package SＲAM, when the low energyions are incident, in the Si path, the MBU rate of the SＲAM in the lower stack die is higher than that inthe upper stack die; and in the TSV (Cu) path, the MBU rate of the SＲAM in the lower stack die ishigher than that in the Si die.
41988 具有相同 LET 值的高能离子产生的影响较小。 The influence of high energy ions with the same LET value is less.
41989 相比 2D SＲAM，在空间辐射环境中使用基于 TSV 转接板技术的 3D 封装 SＲAM 时，需要进行更严格的评估。 Compared with 2D SＲAM, 3D package SＲAM based on TSV interposer technology needs to be evaluatedmore strictly in space radiation environment.
41990 为使 3 300 V 及以上电压等级绝缘栅双极型晶体管 ( IGBT) 的工作结温达到150 ℃ 以上，设计了一种具有高结终端效率、结构简单且工艺可实现的线性变窄场限环 ( LNFLＲ) 终端结构。 In order to realize the operating junction temperature of 3 300 V and above voltage levelinsulated gate bipolar transistor (IGBT) is higher than 150 ℃, a linear narrowed field limiting ring(LNFLＲ) termination structure with high junction termination efficiency, simple structure and processachievable was designed.
41991 采用 TCAD 软件对这种终端结构的击穿电压、电场分布和击穿电流等进行了仿真， The TCAD simulation software was used to simulate the breakdown voltage, electric field distribution and breakdown current of the termination structure.
41992 调整环宽、环间距及线性变窄的公差值等结构参数以获得最优的电场分布， The structural parameters such as ring width, ring spacing and linear narrowing tolerance value were adjusted to obtain the optimalelectric field distribution.
41993 重点对比了高环掺杂浓度和低环掺杂浓度两种情况下 LNFLＲ 终端的阻断特性。 The blocking characteristics of the LNFLＲ termination with high ring doping concentration and low ring doping concentration were emphatically compared.
41994 仿真结果表明，低环掺杂浓度的 LNFLＲ 终端具有更高的击穿电压。 The simulation results showthat the LNFLＲ termination with low ring doping concentration has a higher breakdown voltage.
41995 进一步通过折中击穿电压和终端宽度，采用 LNFLＲ 终端的 3 300 V IGBT器件可以实现 4 500 V 以上的终端耐压，而终端宽度只有 700 μm，相对于标准的场限环场板( FLＲFP) 终端缩小了 50%。 Furthermore, by compromising breakdown voltage and termination width, the new LNFLＲ termination of3 300 V IGBT can achieve a breakdown voltage of above 4 500 V, and the termination width is only700 μm, which is 50% smaller than that of the standard field limiting ring and field plate(FLＲFP) termination.