ID 原文 译文
41946 该器件在零偏压和反偏压下均有明显的光电响应。 The device shows obvious photoelectric response under both zero bias voltage and reversedbias.
41947 在－1 V 偏压下器件响应度为 1. 52 mA/W ( 激光波长 532 nm，光强 3. 82 mW/mm2) ，响应时间约为0.94 s，光电流开关比为 1. 03×103。 At －1 V bias voltage, the device achieves a high responsivity of 1. 52 mA/W (laser wavelength of532 nm, light intensity of 3. 82 mW/mm2) , a short response time of about 0. 94 s, the photocurrenton / off ratio of 1. 03×103.
41948 相比于 g-C3N4器件，g-C3N4 /p++-Si 异质结器件具有更高的光电灵敏度。 Compared with g-C3N4 devices, the g-C3N4 /p++-Si heterojunction device has ahigher photoelectric responsivity due to the high quality built-in electric field formed at the interface ofg-C3N4 and p++-Si.
41949 经过分析，其光电性能的提高是由于 g-C3N4与 Si 之间形成了高质量的内建电场，该内建电场有效分离了 g-C3N4中具有高结合能的激子，从而获得高的光生电流。 The built-in electric field effectively dissociates the excitons with high binding energy generated in g-C3N4, resulting in a higher photocurrent.
41950 特别是该器件在零偏压条件下的光电流开关比仍然可达 103以上，响应速度为 0. 5 s，表明 g-C3N4 /p++-Si 异质结器件在自供电低噪声光电探测器领域具有很好的应用前景。 Especially, the device exhibits a high photocurrent on /off ratio of over 103 and a response speed of 0. 5 s even under zero bias voltage, whichpredicts that g-C3 N4 /p++-Si heterojunction device has a promising prospect in low noise self-poweredphotodetector field.
41951 焊料老化是绝缘栅双极型晶体管 ( IGBT) 模块内部传热能力退化和结温估计偏离的主要诱因。 Solder aging is the main cause of heat transfer capability deterioration inside insulatedgate bipolar transistor (IGBT) modules and estimation errors of the junction temperature.
41952 利用壳温与焊料老化程度间的对应规律构建了两者的量化关系，提出了焊料老化状态监测方法。 A monitoring method of the solder aging condition was proposed through establishing a quantitative relationship betweenthe case temperature and solder aging degree.
41953 采用与功率损耗无关的参数对恶化 Cauer 热网络 ( CTN) 有效传热面积进行表征，提出了焊料裂纹诱导的结温低估补偿机制; A compensation mechanism of the junction temperature underestimation caused by solder cracks was proposed by adopting a parameter independent of the powerloss to characterize the effective heat transfer area of the deteriorated Cauer thermal network (CTN) .
41954 考虑温度相关的异质材料导热系数及比热容参量，抑制了温升引起的材料传热特性退化影响。 The thermal conductivity and specific heat capacity dependent of the temperature of heterogeneous materialswere taken into consideration to inhibit the influence of material heat transfer property degradation caused by temperature rise.
41955 在此基础上，通过对传统 CTN 模型的优化，克服了传热路径无法自适应配置问题。 Based on this, the difficulty in adaptive configuration of heat spreading path wasvercome through optimizing the traditional CTN model.