ID 原文 译文
41936 对功率器件的动态特性和静态特性进行综合分析，采用非分段受控电流源模型模拟功率器件静态特性，具体分析 SiC MOSFET 的开关过程，同时采用曲线拟合的方法对影响器件开关过程的非线性电容进行表征，在 Matlab /Simulink 中建立 SiC MOSFET 等效电路模型。 The dynamic and static characteristics of the power device were comprehensively analyzed.The non-segmented controlled current source model was used to simulate the static characteristic of thepower device, the switching process of the SiC MOSFET was specifically analyzed, the nonlinear capacitance affecting the switching process of the device was characterized by using curve fitting method, andthe SiC MOSFET equivalent circuit model was established in Matlab /Simulink.
41937 为了验证模型准确性，将仿真结果与数据手册中的数据进行比较分析， In order to verify theaccuracy of the model, the simulation results were compared with the data in datasheet.
41938 仿真结果表明所建模型可以较为准确地描述 SiC MOSFET 动、静态特性，开通时间和关断时间误差均小于 7%，对比结果验证了模型的准确性和有效性。 The simulation results show that the proposed model can describe the dynamic and static characteristics of the SiC MOSFET accurately, while the turn-on time and turn-off time errors are within 7%, and the comparisonresults verify the accuracy and validity of the model.
41939 建立的模型为 SiC MOSFET 在电机控制策略仿真及应用领域提供了参考依据。 The established model provides a reference for thesimulation and application of SiC MOSFETs in motor control strategies.
41940 研究了基于 0. 18 μm 部分耗尽型绝缘体上硅 ( PDSOI) 工艺的静电放电 ( ESD) 防护NMOS 器件的高温特性。 The high-temperature characteristics of the NMOSFET with electrostatic discharge(ESD) protection based on the 0.18 μm partially depleted silicon-on-insulator (PDSOI) technologywere studied.
41941 借助传输线脉冲 ( TLP) 测试系统对该 ESD 防护器件在 30 ～ 195 ℃ 内的ESD 防护特性进行了测试。 The ESD protection characteristics in the temperature range of 30－195 ℃ of the ESD protection device were measured by the transmission line pulse (TLP) test system.
41942 讨论了温度对 ESD 特征参数的影响，发现随着温度升高，该 ESD 防护器件的一次击穿电压和维持电压均降低约 11%，失效电流也降低近 9. 1%， The effect oftemperature on the ESD characteristic parameters was discussed.It is found that the first breakdown voltage and the holding voltage of the ESD protection device are both decreased by about 11%, and the failure current also shows a degradation of nearly 9.1% with the increasing temperature.
41943 并通过对器件体电阻、源－体结开启电压、沟道电流、寄生双极结型晶体管 ( BJT) 的增益以及电流热效应的分析，解释了 ESD 特征参数发生上述变化的原因。 The reasons for the changes of the ESD characteristic parameters were explained by analyzing the body resistance, turn-onvoltage of the source-body junction, channel current, the gain of the parasitic bipolar junction transistor(BJT) and current thermal effects of the device.
41944 研究结果为应用于高温电路的 ESD 防护器件的设计与开发提供了有效参考。 The research results provide a useful reference for thedesign and development of ESD protection devices applied to the high-temperature circuit.
41945 通过旋涂法制备垂直型的 g-C3N4 /p++-Si 异质结器件，研究该异质结器件的光电特性，探索其在可见和紫外光区的光电响应规律。 A vertical g-C3N4 /p++-Si heterojunction device was fabricated by using spin-coatingmethod. The photoelectric characteristic of the heterojunction device was explored in visible and ultravioletlight regions.