ID 原文 译文
41916 针对 SOI 工艺 ESD 防护设计难点，进行了全芯片 ESD 防护原理分析，通过对 ESD 防护器件、I/O 管脚 ESD 防护电路、电源钳位电路和 ESD 防护网络的优化设计，有效减小了 SHE 的影响。 In view of the ESD protection design difficulty on SOI technology, the principle of whole-chip ESD protection was analyzed.By optimizing the design of an ESD protectiondevice, an I/O pin ESD protection circuit, a power clamp circuit and an ESD protection network, theSHE influence was effectively reduced.
41917 该电路通过了 4. 5 kV 人体模型 ESD 测试，相比国内外同类电路有较大提高，可以为深亚微米 SOI 工艺 IC ESD 防护设计提供参考。 The circuit has passed a 4.5 kV human body model ESD test, and it is greatly improved compared with other similar circuits at home and abroad.It can provide a reference for the IC ESD protection design based on deep submicron SOI technology.
41918 基于三维集成技术研制了一款适用于表面贴装技术的 Ku 波段四通道 T /Ｒ 模块。 Based on 3D integration technology, a Ku-band four-channel T /Ｒ module suitable forsurface mounted technology was developed.
41919 模块内部设计成两层层叠结构，层间使用球栅阵列实现互连， The internal design of the module was a two-layer laminatedstructure, and the ball grid array was used to realize the interconnection between the layers.
41920 仿真分析模块微波垂直互连结构、腔体谐振和散热模型，实现模块的小型化。 The microwave vertical interconnection structure, cavity resonance and heat dissipation model of the module weresimulated and analyzed to realize the miniaturization of the module.
41921 模块集成了数控移相、数控衰减和串并转换等功能，由幅相控制多功能芯片、开关功率放大器芯片、限幅低噪声放大器和控制芯片构成。 The module integrated functions suchas digital control phase shifting, digital control attenuation and serial-to-parallel conversion, and wascomposed of a multi-function chip for amplitude and phase control, a switching power amplifier chip, alimiting low noise amplifier and a control chip.
41922 测试结果显示，在 Ku 波段内，单路发射通道饱和输出功率大于 30 dBm，接收通道增益大于 20 dB，噪声系数小于 3. 5 dB，模块尺寸为 16 mm×16 mm×2. 5 mm。 The test results show that in the Ku-band, the saturatedoutput power of the single transmitting channel is greater than 30 dBm, the gain of the receiving channelis greater than 20 dB, the noise figure is less than 3.5 dB, and the module size is 16 mm×16 mm×2.5 mm.
41923 基于 GaAs 单片微波集成电路 ( MMIC) 工艺设计并制备了一款宽带射频前端多功能电路芯片，其包含功率放大器、限幅低噪声放大器 ( LNA) 和收发开关。 Based on the GaAs monolithic microwave integrated circuit (MMIC) process, a broadband ＲF front-end multifunctional circuit chip which contained a power amplifier, a limiting low noiseamplifier (LNA) and transmitting and receiving switches was designed and prepared.
41924 功率放大器采用平衡式结构同时选择合适的匹配网络实现宽带匹配; The poweramplifier adopted a balanced structure and selected a suitable matching network to realize broadbandmatching.
41925 限幅器第一级采用功分结构提高耐功率能力; The first stage of the limiter adopted a power division structure to improve the power withstandcapability.