ID 原文 译文
41866 并搭建了相应的测试系统，对不同厂家的 UVCLED 进行了测量和性能评价。 The corresponding test system was built to measure and evaluate the performance of the UVC-LED from differentmanufacturers.
41867 实验结果表明，该测试方法和系统能够用于快速评价 UVC-LED 芯片质量，为企业提供了一种高效、简便的 UVC-LED 芯片质量评价方法。 The experimental results show that the test method and system can be used to quicklyevaluate the quality of UVC-LED chips, and it provides an efficient and simple quality evaluation methodof UVC-LED chips for the manufacturers.
41868 紫外光在各领域应用广泛，制备高性能紫外光电探测器 ( UV PD) 受到研究人员的重视。 Ultraviolet light is widely used in various fields, and the preparation of ultraviolet photodetectors (UV PDs) with high performance has attracted the attention of researchers.
41869 GaN 作为宽禁带半导体材料，具有高电子迁移率、稳定的物理化学性质、高击穿电压、低暗电流和固有可见盲区的特点。 As a wide bandgapsemiconductor material, GaN has the characteristics of high electron mobility, stable physical chemicalproperties, high breakdown voltage, low dark current and inherent visible-blind area.
41870 GaN 基 UV PD 具有制备工艺简单、体积小无需附加滤光系统、易于与其他材料集成等特点，表现出优异的紫外光探测性能。 GaN-based UVPD has the advantages of simple preparation process, small size, no additional filter system, easy integration with other materials and so on, showing an excellent ultraviolet detection performance.
41871 围绕 GaN 基 UV PD，介绍了 GaN材料在制备工艺上的研究进展; Based onthe GaN-based UV PD, firstly, the research progress in the preparation process of GaN materials isintroduced.
41872 详细论述了常见结构 GaN 基 UV PD 最新结构的优化对器件性能的影响; Subsequently, the influences of the latest structural optimization of the common structuralGaN-based UV PD on the device performance are discussed in detail,
41873 介绍了基于表面声波、表面等离激元和场效应晶体管集成的新型 GaN 基 UV PD; and several new GaN-based UVPDs based on the surface acoustic wave, surface plasmon and field effect transistor integration are introduced.
41874 最后，对 GaN 基 UV PD 的发展趋势进行了展望。 Finally, the development trend of the GaN-based UV PD is prospected.
41875 在全耗尽绝缘体上硅 ( FDSOI) 衬底上制备了一种新型隧穿场效应晶体管 ( TFET) ， A novel tunneling field effect transistor (TFET) was prepared on fully depleted siliconon-insulator (FDSOI) substrate.