ID 原文 译文
41856 设计了基于实时监测菊花链拓扑结构动态电阻的叠层球栅阵列封装 ( BGA) 焊接可靠性评价方法，使用该方法研究叠层器件 BGA 焊接互连结构的环境可靠性。 Based on real-time monitoring of the dynamic resistance of daisy chain topologystructure, an evaluation method for welding reliability of ball grid array package (BGA) was designed tostudy the environmental reliability of the BGA welding interconnection structure of the stacked devices.
41857 以基于硅通孔( TSV) 技术的 BGA 互连的硅基双层器件为例， Taking the silicon-based double-layer device of BGA welding interconnection structure based on throughsilicon via (TSV) technology as an example,
41858 首先通过有限元仿真确定叠层器件各层焊点在－55～125 ℃条件下的应变和应力，并根据应变和应力将每一叠层焊点划分为敏感焊点和可靠焊点; firstly, the strain and stress of each layer＇s solder jointsin the stacked device at －55－125 ℃ were determined through finite element simulation, and solder jointsof each layer were divided into sensitive solder joints and reliable solder joints according to the stress andstrain.
41859 然后将敏感焊点通过器件键合焊盘、键合丝、TSV、垂直过孔、可靠焊点和 PCB 布线相连接形成菊花链。 Then, sensitive solder joints were connected with PCB traces through the bonding pads, bondingwires, TSV, vertical vias and reliable solder joints to form a daisy chain.
41860 由于敏感焊点是菊花链的薄弱环节，可以通过监测菊花链电阻变化来研究叠层器件的环境可靠性， As the sensitive solder jointwas the weak link of the whole daisy chain, the environmental reliability of the stacked device can bestudied by monitoring the resistance change of the daisy chain.
41861 并以此为基础设计了堆叠结构 BGA 产品焊接可靠性试验系统。 Based on this, the stacked BGAreliability test system was designed.
41862 该方法简单高效，能快速解决常规失效分析方法无法检测的 BGA 虚焊接、微小缺陷等问题。 This method is simple and efficient, and can solve the problemsquickly, such as virtual welding and minor defects of BGA which cannot be detected by conventionalfailure analysis methods.
41863 受新冠疫情影响，可用于杀菌消毒的短波紫外发光二极管 ( UVC-LED) 市场需求急剧增加， Under the influence of COVID－19 epidemic, the market demand of the short wave ultraviolet light-emitting diode (UVC-LED) which can be used for sterilization and disinfection is increasingrapidly.
41864 但是目前对 UVC-LED 的参数测量没有相应的国家标准，市场上芯片质量良莠不齐，严重制约了 UVC-LED 的应用。 However, there is no corresponding national standard for the parameter measurement of theUVC-LED, and the chip quality in the market is uneven, which seriously restricts the application of theUVC-LED.
41865 从外延生长质量和芯片制作工艺对 UVC-LED 宏观光电特性的影响出发，选择 I-V 特性曲线离散性、辐射强度和辐射通量电流饱和效应作为测量参数，提出了一套能够方便、快速地判断出芯片质量优劣的方法， Based on the influences of the epitaxial growth quality and chip manufacturing process on themacroscopic photoelectric effect of the UVC-LED, the discreteness of I-V characteristic curves, radiationintensity and radiation flux current saturation effect were selected as the measurement parameters, and aset of methods that could conveniently and quickly judge the quality of the chip was proposed.