ID 原文 译文
41836 基于大功率微波输能的需求，制备了新型 AlGaN/GaN 非凹槽混合阳极肖特基势垒二极管 ( SBD) 。 Based on the demand for the high-power microwave power transmission, a new type ofrecess-free AlGaN/GaN hybrid anode Schottky barrier diode (SBD) was prepared.
41837 对新型结构的器件进行了小信号建模，可用于微波输能电路设计。 Small signal model ofthe new structure device was carried out, and it could be used in the design of the microwave powertransmission circuit.
41838 通过开路、短路去嵌结构法从小信号 S 参数中提取了器件的寄生电容、电感和电阻， The parasitic capacitance, inductance and resistance of the device were extractedfrom the small signal S parameters through the open and short de-embedding structure method.
41839 结合去嵌后的 S 参数与直流 I-V、C-V 特性曲线提取了器件的本征参数。 The intrinsic parameters of the device were extracted by combining the de-embedding S parameters and the DCI-V and C-V characteristic curves.
41840 综合寄生和本征参数建立了器件的小信号模型， A small signal model of the device was established by integrating the parasitic and intrinsic parameters.
41841 将模型仿真结果与器件的实测结果进行了对比，同时引入误差因子评估了模型的准确度。 The simulation results of the model were compared with the measured results of the device, and an error factor was introduced to evaluate the accuracy of the model.
41842 结果表明，在 0. 1～10 GHz 内，回波损耗相对误差小于 4. 1%，插入损耗相对误差小于 3. 7%，验证了所提出模型的可行性和准确性。 The results show that within 0. 1－10 GHz, the relative error of the return loss is less than 4. 1%, and the relative errorof the insertion loss is less than 3. 7%, verifying the feasibility and accuracy of the proposed model.
41843 基于 0. 15 μm GaAs pin 二极管和 GaAs PHEMT 工艺，设计并实现了一款 5～13 GHz 限幅低噪声放大器 ( LNA) 单片微波集成电路 ( MMIC) 。 Based on the 0. 15 μm GaAs pin diode and GaAs PHEMT processes, a monolithic microwave integrated circuit (MMIC) limiter low noise amplifier (LNA) of 5－13 GHz was designed andimplemented.
41844 该 MMIC 中限幅器采用三级反向并联二极管结构，优化了插入损耗和耐功率性能; The limier in the MMIC adopts a three-stage reverse parallel diode structure to optimize theinsertion loss and power resistance performances.
41845 LNA 采用两级级联设计，利用负反馈和源电感匹配，在宽带下实现平坦的增益和较小的噪声; The LNA adopts two-level cascade design, and usesnegative feedback and source inductance matching to achieve flat gain and less noise under broad band.