ID 原文 译文
41826 周围物质变得疏松甚至发生局部断裂,且 Pt 的原子数分数降低,从而形成不导电结构。 The surrounding materials become loose and even fracture locally, meanwhile the atom fraction of Ptdecreases, therefore it becomes a non-conductive structure.
41827 进一步对样品进行升温电学测试,结果表明,在 120 ℃以上 Pt 纳米导线在内部电流与外部加热共同作用下发生 Pt 晶粒生长及团聚,使 Pt 空缺的间隙变大,从而造成 Pt 纳米导线的电学失效。 The heating electrical test result of samplesshows that above 120 ℃, under the combined action of the internal current and external heating, Pt grainsgrow and agglomerate, which enlarges Pt vacancy gaps and causes the electrical failure of the Pt nanowire.
41828 回流焊过程中,双边扁平无引脚 ( DFN) 封装会因为巨大的温度变化产生翘曲和应力,影响超高频射频识别 ( RFID) 芯片的性能和可靠性。 During reflow soldering, the dual flat no-leads (DFN) package will produce warpageand stress due to the huge temperature variations, which will affect the performance and reliability of theultra-high frequency radio frequency identification (RFID) chip.
41829 选取 DFN3 封装为例从理论方面分析结构和材料参数对封装翘曲和应力的影响, Taking DFN3 package as an example, the influences of structure and material parameters on package warpage and stress were analyzed theoretically.
41830 发现减小环氧塑封料 ( EMC) 热膨胀系数 ( CTE) 、增大其杨氏模量均能减小封装翘曲; It is found that decreasing the coefficient of thermal expansion (CTE) and increasingYoung's modulus of the epoxy molding compound(EMC) can reduce package warpage.
41831 通过有限元仿真分析得出的结论与理论分析相一致。 The conclusionsfrom the finite element simulation analysis are in good agreement with the theoretical analysis.
41832 为了减小封装翘曲和应力,选定具有更小 CTE 9240HF10AK-B3 ( Type R) 作为新型 EMC。 It is found that decreasing the coefficient of thermal expansion (CTE) and increasingYoung's modulus of the epoxy molding compound(EMC) can reduce package warpage.In order toreduce package warpage and stress, 9240HF10AK-B3 (Type R) with smaller CTE was selected as anew EMC.
41833 通过有限元仿真结果对比发现,在 25 ℃时,采用新型 EMC 的封装翘曲增大了 16. 8%,应力减小了 4. 1%; Through the comparison of finite element simulation results, it is found that the warpage ofthe package using new EMC increases by 16.8%, and the stress decreases by 4.1%.
41834 260 ℃时,其封装翘曲减小了 45. 7%,应力减小了 9. 2%。 At 260 ℃, thepackage warpage decreases by 45.7%, and the stress decreases by 9.2%.
41835 同时,新型 EMC RFID 芯片标签回波损耗较之前优化了 6. 59%。 Meanwhile, the return loss ofthe RFID chip tag packaged using new EMC is optimized by 6.59%.