ID 原文 译文
41816 通过二极管导通测试和加电测试确定故障位置和失效情况,并对失效产品进行开帽和去层,更精准地定位故障位置。 The fault locations and failure situations were determined by the diode conduction test and the electrification test, and the fault locations were accurately located by de-cap and delayer for the failure product.
41817 通过建立故障树并使用排除法对失效驱动器进行分析,确定其失效的主要原因。 By establishing the fault tree and using the elimination method to analyze thefailure driver, the main cause of its failure was determined.
41818 通过机理分析和故障复现,证明了之前故障定位的准确性和分析的正确性。 The accuracy of the previous faultlocalization and the correctness of the analysis are proved by mechanism analysis and fault reproduction.
41819 最后,为防止类似失效情况的再次发生制定了相应的改进措施。 Finally, the corresponding improvement measures were made to prevent the reproduction of similar failuresituations.
41820 经用户使用验证,故障问题得以解决。 It is proved by the user that the problem has been solved.
41821 研究了聚焦离子束 ( FIB) 沉积 Pt 纳米导线的电学失效行为及其机理。 The electrical failure behavior and mechanism of Pt nanowire deposited by focused ionbeam (FIB) were studied.
41822 FIB 沉积 Pt纳米导线在集成电路修复和微型电极制备等领域有重要应用,其电学特性及失效行为研究对器件结构设计及性能测试具有重要意义。 The Pt nanowire deposited by FIB has important applications in the fields ofintegrated circuit modification, micro-electrode fabrication, etc. Its electrical characteristics and thestudy of the failure behavior were of great significance for device structure design and performance test.
41823 直流电学测试中电压接近 9 V 时,电流快速上升并发生断路。 Inthe DC electrical test, when the voltage increased close to 9 V, the current rised rapidly and brokedown.
41824 经扫描电子显微镜 ( SEM) 和原位 X 射线能谱 ( EDS) 分析发现,断路后 Pt 纳米导线中有球状结构析出, Scanning electron microscopy (SEM) and in-situ X-ray energy dispersive spectroscopy (EDS)analyses show that the spherical structure precipitates from the Pt nanowire after breakdown.
41825 球状结构中 Pt C 的原子数分数之比是原始薄膜中的 4 倍, The atomfraction ratio of Pt and C in the spherical structure is 3 times higher than that in the original film.