ID 原文 译文
41796 该组件采用收发一体多功能芯片方案，将所有器件封装于两层硅基中。其中上层硅基集成了低噪声放大器、功率放大器、开关、电源调制驱动器和 PMOSFET 等芯片，下层硅基集成了多功能芯片、串/并转换芯片以及逻辑运算芯片; The component adopted a transceiver integrated multi-function chip solution, encapsulating all devices in a two-layer silicon base, where the upper silicon base inherited low noiseamplifiers, power amplifiers, switches, power modulation drivers, PMOSFETs and other chips, and the lower silicon base integrated multi-function chips, serial-parallel conversion chips and logic operationchips.
41797 两层硅基封装之间通过植球进行堆叠。 The two-layer silicon-based package was stacked by ball planting,
41798 最终样品尺寸仅为 20 mm×20 mm×3 mm。 and the final sample size isonly 20 mm×20 mm×3 mm.
41799 实测结果显示，在 8 ～ 12 GHz 内，该 T /Ｒ 组件饱和输出功率约为 29 dBm，接收增益约为 21 dB，接收噪声系数小于 3 dB， The measured results show that within 8 － 12 GHz, the saturated outputpower of the T /Ｒ component is about 29 dBm, the receiving gain is about 21 dB, and the receivingnoise figure is less than 3 dB.
41800 在具备优良射频性能的同时实现了组件的小型化。 It has excellent ＲF performance and realizes the miniaturization of thecomponent.
41801 对采用等离子体增强原子层沉积 ( PEALD) 法制备的 Al2O3 薄膜在 n 型单晶硅隧穿氧化层钝化接触 ( TOPCon) 太阳电池正表面的钝化性能进行了研究。 The passivation performances of Al2O3 films prepared by plasma-enhanced atomic layerdeposition (PEALD) method on the front surface of n-type monocrystalline silicon tunnel oxide passivatedcontact (TOPCon) solar cells were studied.
41802 采用少数载流子寿命、X射线电子能谱 ( XPS) 及 J-V 特性的测试分析，重点研究了 Al2O3 沉积温度、薄膜厚度及薄膜形成后不同退火条件对钝化性能的影响， By using minority carrier lifetime, X-ray electron spectroscopy (XPS) and J-V characteristics testing analysis, the influences of the Al2O3 depositiontemperature, film thickness and different annealing conditions after the film formation on the passivationperformance were studied.
41803 实现了低表面复合速率、良好钝化效果的产业化制备的Al2O3 薄膜工艺。 The Al2O3 film process with low surface recombination rate, good passivationeffect and easy industrial preparation was achieved.
41804 研究结果表明，在沉积温度为 150 ℃、膜厚为 5 nm、退火温度为 450 ℃时，测试计算得出薄膜中 O 和 Al 的原子数之比为 2. 08，电池发射极正表面复合速率较低，达到了Al2O3 钝化的最优效果，并且分析了 Al2O3 薄膜的化学态和形成机理。 The research results show that at a deposition temperature of 150 ℃, a film thickness of 5 nm and an annealing temperature of 450 ℃, the atomic numberratio of O and Al in the film is 2.08, the recombination rate of the front surface of the cell emitter islower, and the optimal passivation effect of Al2O3 is achieved.The chemical state and formation mechanism of Al2O3 film were analyzed.
41805 利用其 Al2O3 薄膜工艺制备的 n 型 单 晶 硅 TOPCon 太阳电池开路电压提升了 8 mV，电池的平均光电转换效率达到了 23. 30%。 The open circuit voltage of the n-type monocrystalline silicon TOPConsolar cell prepared by Al2O3 film process is increased by 8 mV, and the average photoelectric conversionefficiency of cells reaches 23.30%.