ID 原文 译文
41786 基于 GaAs 赝配高电子迁移率晶体管 ( PHEMT) 工艺设计了一款超宽带无源双平衡混频器单片微波集成电路 ( MMIC) 。 An ultra wideband passive double balanced mixer monolithic microwaveintegrated circuit (MMIC) was designed based on the GaAs pseudomorphic high electron mobility transistor (PHEMT) process.
41787 该混频器采用环形肖特基二极管结构和两个新颖的螺旋式平行耦合微带线巴伦结构，大大提高了混频器工作带宽，减小了芯片尺寸，提高了本振( LO) 到射频 ( ＲF) 端口的隔离度。 The mixer adopted a ring Schottky diode structure and two novel spiral parallelcoupled microstrip lines baluns, which greatly improved the working bandwidth of the mixer, reducedthe chip size, and improved the isolation between the local oscillator (LO) and radio frequency (ＲF)ports.
41788 在片探针测试结果显示该芯片在上、下变频模式下 ＲF 和LO 工作频率均为 2～22 GHz，中频工作频率为 0～4 GHz，变频损耗≤11. 5 dB，LO 到 ＲF 端口隔离度≥37 dB，LO 输入功率为 15 dBm。 On-wafer probe measurement results show that in the up and down frequency conversion modes theＲF and LO working frequencies of the chip are both 2 － 22 GHz, the intermediate frequency workingfrequency is 0－4 GHz, the conversion loss is not more than 11.5 dB, the isolation between the LO andＲF ports is not less than 37 dB, and the LO input power is 15 dBm.
41789 芯片尺寸为 1. 7 mm×1. 0 mm。 The chip area is 1.7 mm×1.0 mm.
41790 设计了一款低噪声高增益电荷泵，主要用于低相位噪声的频率合成器。 A low noise and high gain charge pump mainly used for frequency synthesizers with lowphase noise was designed.
41791 在传统的电流转向型电荷泵结构中增加了非镜像结构的低噪声电流源单元，使电荷泵的输出电流呈比例增加，降低电荷泵对频率合成器输出相位噪声的贡献，以进一步降低频率合成器的相位噪声。 In the conventional current steering charge pump structure, a low noise currentsource unit with non-mirror structure was added to increase the output current of the charge pump proportionally, and the contribution of the charge pump to the output phase noise of the frequency synthesizerwas reduced, so as to further reduce the phase noise of the frequency synthesizer.
41792 采用0. 18 μm SiGe BiCMOS 工艺进行了设计仿真和流片验证。 The 0.18 μm SiGeBiCMOS process was used for design simulation, chip fabrication and verification.
41793 测试结果表明:频率合成器工作在频率为10 GHz时，电荷泵中高增益低噪声电流源关闭和开启情况下，锁相环相位噪声分别为－106. 1 dBc /Hz@10 kHz 和－108. 68 dBc /Hz@10 kHz。 The test resultsdemonstrate that at the working frequency of the frequency synthesizer of 10 GHz, the phase noise of thephase-locked loop is －106.1 dBc /Hz@10 kHz and －108.68 dBc /Hz@10 kHz respectively when the highgain low noise current source in the charge pump is off and on.
41794 实现了通过开启电荷泵中高增益低噪声电流源使锁相环输出相位噪声下降约 3 dB 的目标。 Hence, the design achieves the goal ofreducing the output phase noise of the phase-locked loop by about 3 dB by turning on the low noisecurrent source in the charge pump.
41795 基于硅基微电子机械系统 ( MEMS) 工艺和三维异构集成技术，研制了一款硅基 X 波段 2×2 相控阵 T /Ｒ 组件。 Based on the silicon-based micro-electromechanical system (MEMS) technology andthree-dimensional heterogeneous integration technology, a silicon-based X-band 2×2 phased array T /Ｒcomponent was developed.