ID 原文 译文
41776 使用这种新型的 QD-SESAM 优化了耦合效率，成功地构建了稳定的环形腔被动锁模掺铒光纤激光器，其斜率效率为 2. 2%，脉冲宽度为 2 ps，重复频率为 16. 5 MHz，最大输出功率约为 4. 1 mW。 Based on the new QD-SESAM, a stable ring-cavity passively mode-locked erbium-dopedfiber laser was successfully constructed by optimizing the couple efficiency and exhibits a slope efficiency of2.2%, a pulse width of 2 ps, a repetition frequency of 16.5 MHz, and a maximum output power of about4.1 mW.
41777 结果表明，这种带有 λ/4 厚度 SiO2 层的 QD-SESAM 在制备高性能锁模激光器方面具有非常大的应用潜力。 These results indicate that the QD-SESAM with a SiO2 layer of λ/4 thickness has great application potential for fabricating mode-locked lasers with excellent performance.
41778 发光二极管 ( LED) 微显示技术由于其潜在应用而倍受关注。 The light-emitting diode (LED) microdisplay technology has attracted great attentiondue to its potential applications.
41779 与主流的基于硅基驱动器的 LED 微显示技术不同，采用 GaN 场效应晶体管 ( FET) 驱动的 LED 微显示技术制作的器件具有可靠性高和制作工艺简单等优势。 Differed from the main LED microdisplay technology based on siliconbased drivers, the device fabricated by the GaN FET-based LED microdisplay technology has advantagessuch as high reliability and simple fabrication process.
41780 总结了各种 GaN FET 驱动 LED 微显示的器件结构及性能，这些器件结构包括: The structures and performance of various GaNFET-driving LED microdisplay devices are summarized.The device structures include:
41781 直接利用 LED 外延结构制作 FET 驱动微型 LED 发光像素的横向集成结构、HEMT 驱动微型 LED 发光像素的横向叠层结构、纳米线 GaN FET 驱动 LED 发光像素的垂直叠层结构。 the lateral integration structure directly using LED epitaxial structure to make micro-LED light-emitting pixels driven byFETs, the lateral laminated structure of HEMT driving micro-LED light-emitting pixels and vertical laminated structure of nanowire GaN FET driving micro-LED light-emitting pixels.
41782 对基于 GaN FET 驱动的 LED 微显示技术的进展进行了综述。 The progress of LEDmicrodisplay technology based on GaN FET driving is reviewed.
41783 对 GaN FET 驱动的 LED 微显示技术的应用前景和研究方向进行了展望。 The application and research direction ofGaN FET driving LED microdisplay technology are prospected.
41784 混频器是微波系统关键部件之一。 Mixer is one of the key components of microwave systems.
41785 微波通信系统的宽带化和小型化发展趋势对混频器性能提出更高要求。 The wideband and miniaturization development tendency of microwave communication systems puts forward higher requirements onthe performance of mixers.