ID 原文 译文
41766 发光二极管 ( LED) 微显示技术由于其潜在应用而倍受关注。 The light-emitting diode (LED) microdisplay technology has attracted great attentiondue to its potential applications.
41767 与主流的基于硅基驱动器的 LED 微显示技术不同，采用 GaN 场效应晶体管 ( FET) 驱动的 LED 微显示技术制作的器件具有可靠性高和制作工艺简单等优势。 Differed from the main LED microdisplay technology based on siliconbased drivers, the device fabricated by the GaN FET-based LED microdisplay technology has advantagessuch as high reliability and simple fabrication process.
41768 总结了各种 GaN FET 驱动 LED 微显示的器件结构及性能，这些器件结构包括: The structures and performance of various GaNFET-driving LED microdisplay devices are summarized.The device structures include:
41769 直接利用 LED 外延结构制作 FET 驱动微型 LED 发光像素的横向集成结构、HEMT 驱动微型 LED 发光像素的横向叠层结构、纳米线 GaN FET 驱动 LED 发光像素的垂直叠层结构。 the lateral integration structure directly using LED epitaxial structure to make micro-LED light-emitting pixels driven byFETs, the lateral laminated structure of HEMT driving micro-LED light-emitting pixels and vertical laminated structure of nanowire GaN FET driving micro-LED light-emitting pixels.
41770 对基于 GaN FET 驱动的 LED 微显示技术的进展进行了综述。 The progress of LEDmicrodisplay technology based on GaN FET driving is reviewed.
41771 对 GaN FET 驱动的 LED 微显示技术的应用前景和研究方向进行了展望。 The application and research direction of GaN FET driving LED microdisplay technology are prospected.
41772 锁模光纤激光器在工业加工、光通信、光学传感等领域有广泛的应用。 Mode-locked fiber lasers have been widely used in industrial processing, optical communication, optical sensing and other fields.
41773 由于在 GaAs 基板上制备的 InAs 量子点 ( QD) 半导体可饱和吸收镜 ( QD-SESAM) 增益谱较宽、成本较低，将其应用于锁模光纤激光器具有非常大的潜力。 The quantum dot semiconductor saturable absorption mirror(QD-SESAM) based on InAs/GaAs quantum dots (QDs) exhibits great potential for application in themode-locked fiber laser due to its wide gain spectrum and low cost.
41774 然而，生长发光中心波长 ( λ) 为1 550 nm的高性能QD-SESAM 仍然十分困难。 However, it is still difficult to obtainthe high-quality QD-SESAM with a central wavelength (λ) of 1 550 nm.
41775 采用分子束外延 ( MBE) 生长制备了 1 550 nm GaAs 基 InAs QDSESAM，通过在 SESAM 上表面生长厚度为 λ/4 的 SiO2 层，将 QD-SESAM 的调制深度提升至 1. 4%。 The InAs/GaAs QD-SESAMwas prepared by molecular beam epitaxy (MBE) growth, and then, the SiO2 layer with a thickness ofλ /4 was grown on the surface of the SESAM, which increased the modulation depth of the QD-SESAMup to 1.4%.