| ID | 原文 | 译文 |
| 41756 | 对封装好的半导体激光器进行了电光特性测试。 | The electro-optical characteristics of the packaged semiconductor laser were tested. |
| 41757 | 测试结果表明，器件的波导宽 190 !m、腔长 4 mm，25 ℃ 时的阈值电流为 1. 5 A，12 A 直流驱动下的输出功率达到12. | The results show that the device with a waveguidewidth of 190 μm and a cavity length of 4 mm has a threshold current of 1.5 A at 25 ℃, an output power of12. |
| 41758 | 47 W，最高电光转换效率为 61. 3%，腔面没有出现灾变性光学烧毁。 | 47 W under 12 A DC drive, and a maximum electro-optical conversion eciency of 61.3% withoutcatastrophic optical damages on the cavity surface. |
| 41759 | 器件的快轴发散角为28°，慢轴发散角为 8°。 | The fast-axis and slow-axis divergence angles of thedevice are 28° and 8°, respectively. |
| 41760 | 器件在 45 ℃、14 A 的驱动电流下工作 8 000 h 没有失效，并由此推算器件在 25 ℃、12 A 的恒流驱动下，寿命大于 100 000 h。 | The device has operated for 8 000 h under 14 A drive current at 45 ℃without failure.And it can be inferred that the device has a lifetime of more than 100 000 h under aconstant drive current of 12 A at 25 ℃. |
| 41761 | 为了抑制选通－阻变 ( 1S1Ｒ) 交叉结构阵列在写操作过程中存在的选通器耐受性退化，对施加不同脉冲幅值和宽度的写入电压时 HfO2 /Ag 纳米点阈值开关选通器件的耐受性退化情况进行了测试和分子动力学模拟。 | In order to mitigate endurance degradation of the selector during write operation of theone-selector-one-resistor (1S1Ｒ) crossbar array, the endurance degradation of the HfO2 /Ag nanodotsthreshold switch based selector under write voltages with different pulse amplitudes and widths was testedand simulated by molecular dynamics. |
| 41762 | 结果表明，随着写入电压幅值和脉冲宽度的增加，选通器耐受性下降。 | It is found that the endurance of the selector degrades as the amplitude and pulse width of the write voltage increases. |
| 41763 | 基于此结果，提出一种将选通器开启过程和阻变存储器写过程分开操作的 1S1Ｒ 阵列两步写入方法来降低写过程中选通器上的分压，抑制选通器耐受性的退化。 | Based on this result, a two-step write scheme thatseparated the processes of turning on selector and writing resistive random-access memory was proposed to enhance the endurance of the selector by reducing the operation voltage on the selector. |
| 41764 | 仿真和测试结果表明，相较于一步写操作方法，采用两步写入方法后，选通器件耐受性提高了一个数量级。 | Simulation andtest results indicate that this two-step write scheme can improve the endurance of the selector by an orderof magnitude compared with the one-step write scheme. |
| 41765 | 此外，采用两步写入方法后，阵列能耗可降低 58%以上，有利于大规模阵列的应用。 | Moreover, the energy consumption of the arraycan also be reduced by more than 58% by using the two-step write scheme, which is beneficial to theapplication of large-scale array. |