ID 原文 译文
41746 结果表明，所制备的少层 MoS2薄膜具有良好的结晶性和层状结构，并可实现大面积的薄膜转移。 The result shows that the prepared few-layer MoS2 films have good crystallinity and layeredstructure. Furthermore, the large area few-layer MoS2 film can be easily transferred.
41747 半导体器件可靠性受其热效应的影响， The reliability of semiconductor devices is affected by thermal effect.
41748 多通道 T /Ｒ 组件的温度场本身存在多热源耦合，还受到电磁损耗的影响。 The multi-heatsource coupling phenomenon exists in the temperature field of multi-channel T /Ｒ module, which is alsoaffected by the electromagnetic loss.
41749 为定量研究组件的热效应，建立了基于有限元仿真的 T /Ｒ 组件热力学模型，除芯片热效应和组件的三维结构外，该模型还考虑了组件不同位置的材料特性、组件表面电磁功率损耗和印制电路板 ( PCB) 布线， To study the thermal effect of the module quantitatively, athermodynamic model of the T /Ｒ module based on finite element simulation was established.In additionto the thermal effect of the chip and the three-dimensional structure of the module, the material characteristics at different positions of the module, the electromagnetic power loss on the surface of the moduleand the printed circuit board (PCB) wiring were also considered in the model.
41750 较传统模型大幅提高了模型精细化程度。 Compared with the conventional model, the refinement of the model is obviously improved.
41751 通过仿真得到了多通道 T /Ｒ 组件的温度场分布，为组件热设计提供了依据，仿真分析认为 PCB 含铜量和外壳表面积是影响散热效率的关键因素。 The temperature field distribution ofthe multi-channel T /Ｒ module was obtained by simulation, providing basis for the thermal design of themodule. The simulation analysis shows that the copper content of the PCB and the surface area of the shellare the important factors affecting the heat dissipation efficiency.
41752 最后利用红外热像仪对组件进行测试，并将实测结果与仿真结果进行验证。 Finally, the module was tested by the infrared thermal imager, and the measurement results were verified with the simulation results.
41753 仿真结果与实测结果相接近，模型精度较传统仿真模型有较大提升。 It shows thatthe simulation results are close to the measurement values, and the accuracy of the model is obviously improved compared with the conventional model.
41754 研制了一款基于 AlGaInAs/AlGaAs 应变补偿量子阱大光腔结构的 808 nm 半导体激光器。 An 808 nm semiconductor laser based on large cavity structure of AlGaInAs/AlGaAs straincompensated quantum well was developed.
41755 采用金属有机物化学气相沉积方法外延生长，在超高真空环境下进行圆片解理，然后原位沉积钝化膜，最后在镀膜机内沉积增透膜和高反膜，避免了激光器腔面在空气中解理容易使其被空气中的氧和碳等杂质污染。 Metal organic chemical vapor deposition method was used forepitaxial growth.Wafer cleavage was carried out in an ultra-high vacuum environment, then thepassivation film was deposited in situ, and finally the anti-reflection film and high-reflection film were deposited in the coating machine, which avoided the cleavage of the laser cavity surface in the air that mightcause it to be polluted by impurities such as oxygen and carbon in the air.