ID 原文 译文
41736 镶嵌硅纳米晶的 SiO2薄膜 ( Si-nc ∶ SiO2 ) 是目前主要的硅发光材料。 SiO2 thin film embedded with silicon nanocrystal (Si-nc ∶ SiO2) is the main silicon luminescence material at present.
41737 Si-nc 发光强度低的缺点阻碍了它的应用，因此寻求一种制备高亮度 Si-nc ∶ SiO2的方法尤为重要。 The low luminescence intensity of the Si-nc hinders its application, so it isparticularly important to find a method to prepare high brightness Si-nc ∶ SiO2 .
41738 使用氢硅倍半环氧乙烷 ( HSQ) 热退火方法制备高亮度的 Si-nc ∶ SiO2，通过控制腐蚀时间改变 Si-nc 的粒径和发光峰位。 High brightness Si-nc ∶SiO2 was prepared by using the hydrogen silsesquioxane (HSQ) thermal annealing method, and the particle size and luminescence peak of Si-ncs were changed by controlling the etching time.
41739 采用透射电子显微镜、X 射线衍射、光致发光和拉曼光谱等表征 Si-nc ∶ SiO2的结构和性能。 The transmissionelectron microscope, X-ray diffraction, photoluminescence and Ｒaman spectroscopy were used tocharacterize the structure and performance of Si-nc ∶ SiO2.
41740 将 HSQ 热退火方法制备的 Si-nc ∶ SiO2样品与蒸镀方法制备的 Si-nc ∶ SiO2进行比较， The Si-nc ∶ SiO2 samples prepared by the HSQthermal annealing method were compared with those prepared by the evaporation method.
41741 得出采用 HSQ 热退火方法制备的 Si-nc ∶ SiO2样品的性能远高于采用蒸镀方法制备的样品的性能，最终获得了发光波长为 570 nm ( 黄光) 、610 nm ( 橙光) 和 730 nm ( 红光) 的 Si-nc ∶ SiO2。 It is found thatthe performance of the Si-nc ∶ SiO2 samples prepared by the HSQ thermal annealing method is muchbetter than that of the samples prepared by the evaporation method. Si-nc ∶ SiO2 with emission wavelengthsof 570 nm (yellow) , 610 nm (orange) and 730 nm (red) are finally obtained.
41742 以 MoS2为代表的二维半导体材料是有望用于下一代光电子器件的新兴材料， Two-dimensional semiconductor materials represented as MoS2 are emerging materials thatare expected to be used in next-generation optoelectronic devices.
41743 实现大面积连续二维半导体薄膜材料的制备将促进相关材料的工业应用。 The realization of the fabrication oflarge-area continuous two-dimensional semiconductor film materials will promote industrial applications ofrelated materials.
41744 在 ( NH4 ) 2MoS4前驱体溶液中添加聚乙烯醇 ( PVA) 提高 ( NH4 ) 2MoS4旋涂薄膜的均匀性，然后在 H2气氛下加入硫粉，利用高温热解工艺在 SiO2 /Si 基片上制备了大面积、连续均匀的层状 MoS2薄膜。 The uniformity of the (NH4) 2 MoS4 spin-coated film was improved by adding poly(vinyl alcohol) (PVA) to the (NH4) 2MoS4 precursor solution, and then the large-area continuous anduniform MoS2 films were prepared on SiO2 /Si substrates by high temperature pyrolysis process with sulfurpowder in H2 atmosphere.
41745 采用光学显微镜、原子力显微镜 ( AFM) 、X 射线光电子能谱 ( XPS) 、拉曼光谱、透射电子显微镜 ( TEM) 、扫描电子显微镜 ( SEM) 、紫外可见 ( UV-Vis) 分光光度计以及输出特性曲线对 MoS2薄膜的形貌、结构和光电性能进行了表征。 The morphology, structure and photoelectric properties of MoS2 films werecharacterized by the optical microscope, atomic force microscope (AFM) , X-ray photoelectronspectroscopy (XPS) , Ｒaman spectroscopy, transmission electron microscope (TEM) , scanningelectron microscope (SEM) , ultraviolet-visible (UV-Vis) spectrophotometer and output characteristiccurve.