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41726 其次，通过理论分析，明确了 di /dt 和 dv/dt 的关键影响因子为驱动电阻、栅源电容、栅漏电容和温度。 Secondly, through theoretical analysis, thekey influencing factors of di /dt and dv/dt are determined as driving resistance, gate-source capacitance, gate-drain capacitance and temperature.
41727 然后，在 Simplorer 软件中搭建双脉冲测试电路，定量分析了不同驱动参数和温度对 di /dt 和 dv/dt 的影响规律。 Then, a double-pulse test circuit was built using the Simplorersoftware, and the influence law of different driving parameters and temperatures on di /dt and dv/dt wasanalyzed quantitatively.
41728 结果表明:驱动参数对 di /dt 和 dv/dt 具有不同的控制效果，并且 di /dt 和 dv/dt 在开通、关断过程分别体现正温度特性和负温度特性。 The results show that the driving parameters have different control effects ondi /dt and dv/dt, and di /dt and dv/dt reflect positive and negative temperature characteristics respectively in the turn-on and turn-off processes.
41729 最后，以150 ℃环境为例，通过减小关断电阻补偿温度影响，实现了在不增大电应力的前提下，关断损耗降低了 8. 37%。 Finally, taking the environment of 150 ℃ as an example, by reducing the effect of the turn-off resistance compensation temperature, the turn-off loss is reduced by8.37% without increasing the electrical stress.
41730 氧化铟锡 ( ITO) 透明电极能够有效提高 GaN 光导半导体开关的光吸收效率和电场均匀性，但如何在透明电极 ITO 与半绝缘 GaN 之间实现良好的欧姆接触是一个难题。 Indium tin oxide (ITO) transparent electrodes can effectively improve the lightabsorption efficiency and electric field uniformity of GaN photoconductive semiconductor switches, buthow to achieve a good ohmic contact between the transparent electrode ITO and semi-insulated GaN is achallenge.
41731 通过在 ITO和半绝缘 GaN 之间插入与 GaN 功函数相近的 Ti 薄层，并利用快速热退火过程加速 Ti 与 GaN 之间的反应。 By inserting a Ti thin layer with similar work function to that of GaN between ITO and semiinsulated GaN, following by a rapid thermal annealing process, the reaction between Ti and GaN wasaccelerated.
41732 研究发现 Ti 薄层的厚度和退火温度对欧姆接触有重要影响。 It is found that the thickness of the Ti thin layer and annealing temperature have an important effect on the ohmic contact.
41733 在 Ti 薄层厚度为 5 nm时，随着退火温度的升高，ITO/Ti /GaN 之间的接触逐渐转变为欧姆接触，且接触电阻率随之减小; When the thickness of the Ti thin layer is 5 nm, the contact betweenITO/Ti /GaN gradually changes to ohmic contact with the increase of annealing temperature, and thecontact resistivity is decreased.
41734 但当退火温度超过 700 ℃时，欧姆接触变差，这与 ITO 中的 In、Sn 和 O 元素向界面扩散有关; However, the ohmic contact becomes worse when the annealing temperature exceeds 700 ℃, which is related to the diffusion of In, Sn and O elements in ITO to the interface.
41735 适当提高 Ti 薄层的厚度可以有效改善 ITO/Ti /GaN 欧姆电极的热稳定性，但过厚的 Ti 薄层会对 GaN 基光电器件的透过率产生影响。 The Ti thin layer with appropriate thickness can effectively improve the thermal stability of the ITO/Ti /GaN ohmic electrode, but the Ti thin layer with an excessive thickness will affect the transmittance ofGaN-based optoelectronic devices.