ID 原文 译文
41716 为满足新一代 SiC 基功率模块的先进封装需求，研究了 Si3 N4 覆铜活性金属焊接( AMB) 基板的界面空洞控制技术， To meet the advanced packaging requirements of the new generation SiC-based powermodules, the interface void control technology for copper-bonded Si3N4 substrates fabricated throughactive metal brazing (AMB) was studied.
41717 使 Si3N4陶瓷与铜箔界面处的空洞率低于 1%。 The interface void ratio between Si3N4 ceramic and copper wasless than 1%.
41718 选用 Ag-Cu-Ti活性金属焊片作为 Si3N4覆铜基板的焊料层， Ag-Cu-Ti active metal soldering flake was selected as the solder layer of copper-bondedSi3N4 substrates.
41719 其中的活性组分 Ti 可与 Si3N4生成界面反应层 TiN，该材料是界面空洞控制的关键。 Ti, as an active component, can react with Si3N4 to form a TiN interface layer, andTiN is the key material to control the interface void.
41720 在分析界面空洞形成机理的基础上，以空洞率为指标，对原材料前处理、AMB 工艺参数 ( 焊接压力和焊接温度) 进行全因子试验设计 ( DOE) 及方差分析，得到最佳的参数组合为: Based on the analysis of the interface void formationmechanism, a full factorial design of experiment (DOE) and the variance analysis were carried out inconsideration of the raw materials pretreatment and AMB process parameters (welding pressure andwelding temperature) with void ratio as the index, and the optimized parameters combinations wereconfirmed.
41721 化学法与还原法相结合的原材料前处理方式，焊接压力约 2 N，焊接温度900 ℃。 The raw materials pretreatment is a combination of chemical and reduction method, and thewelding pressure and welding temperature are about 2 N and 900 ℃, respectively.
41722 通过原材料前处理和 AMB 工艺优化的界面空洞控制技术，研制出界面空洞率小于 1%的Si3N4覆铜基板，能够满足 SiC 基功率模块封装基板的高可靠应用需求。 Though the raw materials pretreatment and the AMB process optimization interface void control technology, copper-bondedSi3N4 substrate is manufactured with a void ratio of less than 1%, which can meet the applicationrequirements of the high reliability of SiC-based power modules packaging substrates.
41723 SiC 器件的高开关速度使其瞬态过程的非理想特性大为增加，对杂散参数也更为敏感，容易激发高频振荡和过冲。 The high switching speed of SiC devices greatly increases their non-ideal characteristicsin the transient process and is more sensitive to stray parameters, which is easy to excite high frequencyoscillation and overshoot.
41724 为充分发挥其高开关速度优势，提升系统控制性能， To give full play to the advantage of high switching speed and improve the control performance of the system,
41725 首先，建立SiC MOSFET 开关瞬态解析模型，提取了开关过程的关键动态性能参数电流变化率 ( di /dt) 和电压变化率 ( dv/dt) ; firstly, the transient analytical model of the SiC MOSFET switch was established to extract the key dynamic performance parameters, i. e. rate of current change (di /dt) andrate of voltage change (dv/dt) during the switching process.