ID |
原文 |
译文 |
41696 |
真空镀膜的薄膜温度不宜超过 200 ℃。 |
The thin film temperature ofvacuum coating is less than 200 ℃ . |
41697 |
同时,采用高压氮气保护可以有效抑制高温退火后 InSb 薄膜中 Sb 的逃逸现象。 |
At the same time, the escape of Sb in InSb thin films after hightemperature annealing can be effectively inhibited by high pressure N2 protection. |
41698 |
这为 InSb 薄膜的真空制备提供了有益的借鉴。 |
It provides a usefulreference for the vacuum preparation of InSb thin films. |
41699 |
采用气压浸渗法制备了热导率为 850 W·m-1·K-1的铜-硼/金刚石复合材料翅片热沉, |
A Cu-B/diamond composite fin heat sink with a thermal conductivity of 850 W·m-1·K-1was prepared by the gas pressure infiltration method. |
41700 |
测试了其在自然冷却、强迫风冷和强迫水冷三种冷却模式下的散热效果。 |
The heat dissipation effects of the Cu-B/diamond composite fin heat sink were measured in three cooling modes of natural cooling, forced-air cooling and forcedwater cooling. |
41701 |
结果表明,热源功率越高,铜-硼/金刚石复合材料的散热效果越显著。 |
The results show that the higher the power of the heat source, the more significant the heatdissipation effect of the Cu-B/diamond composite. |
41702 |
在强迫水冷模式下,当加热片的输入功率为 80 W 时,使用铜-硼/金刚石复合材料翅片热沉时加热片的最高温度比使用铜翅片热沉时低14 ℃,比使用铝翅片热沉时低 23 ℃。 |
In the forced-water cooling mode, the maximum temperature of the heating plate with the Cu-B/diamond composite fin heat sink is 14 ℃ lower than that with theCu fin heat sink, and is 23 ℃ lower than that with the Al fin heat sink when the input power of the heatingplate is 80 W. |
41703 |
Icepak 热模拟发现,在强迫水冷模式下输入功率为 80 W时,与铜和铝翅片热沉相比,铜-硼/金刚石复合材料翅片热沉的整体温度更低且温度分布更均匀。 |
The Icepak thermal simulation indicates that when the input power is 80 W in the forced-water cooling mode, the overall temperature of the Cu-B/diamond composite fin heat sink is lower and thetemperature distribution is more uniform than that of Cu and Al fin heat sinks. |
41704 |
研究结果证实,铜-硼/金刚石复合材料是一种高效的散热材料,在大功率电子器件散热中具有广阔的应用前景。 |
The results confirm that CuB/diamond composite is an efficient heat dissipation material and has broad application prospects in theheat dissipation of high power electronic devices. |
41705 |
对于具有球形焊点且呈正三角形排列的倒装芯片,由于其待填充的空隙结构复杂,难以通过平均毛细压来建立底部填充的解析模型。 |
For a flip-chip with spherical solder bumps and equilateral triangle arrangement, it isdifficult to establish an analytical model of underfill by the average capillary pressure due to the complexstructure of the gap to be filled. |