| ID | 原文 | 译文 |
| 41686 | 再利用磁控溅射法及热退火在 ZnO-SA 表面修饰了金纳米颗粒，制备了一种新型的金核壳结构的 ZnO-SA。 | Then, goldnanoparticles were modified on the surface of ZnO-SA by magnetron sputtering method and thermal annealing to prepare a new type of ZnO-SA with gold core-shell structure. |
| 41687 | 由于金纳米颗粒的表面等离子体吸收效应，将 ZnO-SA 的调制深度提升至 4. 07%，非饱和损耗降低至 24%。 | The modulation depth of ZnO-SAwas increased to 4.07% and the nonsaturable loss was reduced to 24% due to the surface plasmon absorption effect of gold nanoparticles. |
| 41688 | 使用这种新型的 ZnO-SA 成功地提升了调 Q 激光器的输出特性，同时也构建了稳定的波长为 1. 55 μm 环形腔掺铒光纤锁模激光器， | Using this new ZnO-SA, output characteristics of Q-switched laserwere improved successfully, and a stable ring cavity erbium-doped fiber mode-locked laser at a wavelength of 1.55 μm was constructed. |
| 41689 | 最大平均输出功率为 2. 67 mW，重复频率为 3. 53 MHz。 | The maximum average output power of 2.67 mW and the repetitionfrequency of 3.53 MHz were achieved. |
| 41690 | 研究结果表明，这种具有金纳米颗粒修饰的 ZnO-SA 在制备高性能锁模激光器方面具有巨大的应用潜力。 | These results show that the ZnO-SA modified with gold nanoparticles has great application potential in the fabrication of high-performance mode-locked lasers. |
| 41691 | 锑化铟 ( InSb) 作为Ⅲ-Ⅴ族化合物半导体材料广泛应用于红外探测器、霍尔元件等领域。 | InSb as a Ⅲ-Ⅴcompound semiconductor material is widely used in many fields such asinfrared detector, Hall element and so on. |
| 41692 | InSb 薄膜中 Sb /In 摩尔比直接影响薄膜的电学、光学等性能。 | The Sb /In mole ratio in InSb thin films directly affects theelectrical and optical properties of the thin films. |
| 41693 | 采用真空镀膜方法难以精确控制薄膜中 Sb /In 摩尔比。 | It is difficult to accurately control the Sb /In mole ratioin thin films by vacuum coating. |
| 41694 | 采用真空热阻共蒸发的方法制备 InSb 薄膜， | InSb thin films were prepared by vacuum thermal resistance co-evaporation. |
| 41695 | 获得不同薄膜温度下InSb 薄膜中 Sb /In 摩尔比与蒸发舟内 Sb 与 In 颗粒摩尔比之间的经验公式， | The empirical formula between the Sb /In mole ratio in InSb thin films at different film temperaturesand the mole ratio of Sb /In particles in the evaporation vessel was obtained. |