| ID | 原文 | 译文 |
| 41676 | 通过在沟道中增加重掺杂夹层，器件的平均亚阈值摆幅 ( SSavg ) 得到了改善; | By adding aheavily doped sandwich layer in the channel, the average subthreshold swing (SSavg) of the device wasimproved. |
| 41677 | 又通过改变器件的源极和漏极材料，器件的开关电流比 ( Ion /Ioff ) 得到了改善。 | And by changing the source and drain materials, the on-off current ratio (Ion /Ioff) of the device was improved. |
| 41678 | 对夹层的掺杂浓度和厚度以及沟道的高度也进行了优化。 | The doping concentration and thickness of the sandwich layer and the height of thechannel were optimized. |
| 41679 | 最终优化后的器件开态电流为 220 μA/μm，关态电流为 3. 08×10－10 μA/μm，SSavg为 8. 6 mV/dec，表现出了优越的性能。 | The final optimized device shows outstanding performance with an on-state current of 220 μA/μm, an off-state current of 3.08×10－10μA/μm, and an SSavg of 8.6 mV/dec. |
| 41680 | 与初始器件相比，该器件的 SSavg减小了 77%，Ion /Ioff增加了两个数量级以上。 | The SSavgis reduced by 77% and Ion /Ioff is improved by more than two orders of magnitude, compared with the initial device. |
| 41681 | 此外，提出了针对该器件的可行的制备工艺步骤。 | In addition, the feasible manufacturing process steps were proposed for the device. |
| 41682 | 因此，认为该器件是在超低功耗应用中非常具有潜力的候选器件。 | Therefore, the proposed device is considered to be a very potential candidate device in ultra-low power applications. |
| 41683 | ZnO 是一种优异的可饱和吸收体 ( SA) ， | ZnO is a kind of saturable absorber (SA) material with excellent performance. |
| 41684 | 然而它在近红外波段的光吸收性能较弱，限制了其在超快光子学领域的进一步应用。 | However, the weak optical absorption performance in the near infrared band limits it further applicationin the field of ultrafast photonics. |
| 41685 | 首先采用水浴法制备了 ZnO 微球粉末，旋涂到金镜衬底上制备成 ZnO-SA， | Firstly, ZnO microsphere powder was prepared by using water bathmethod, and then the powder was spin-coated onto gold mirror substrate to prepare ZnO-SA. |