ID 原文 译文
41666 该放大器典型频点 700 MHz 处的输出三阶交调点为 42. 6 dBm，1 dB 压缩点输出功率为 27. 6 dBm。 The amplifier exhibits an output third-order intercept point of 42.6 dBm and an output powerat 1 dB compression point of 27.6 dBm at the typical frequency point of 700 MHz.
41667 通过调整片外输出匹配电路可满足 700 MHz 及其他频段的应用需求。 The amplifier canmeet the application requirements at 700 MHz and other frequency bands by adjusting the outputmatching circuit.
41668 采用机械剥离法得到二维 MoS2材料并将其转移到 SiO2 /Si 衬底上，采用光刻、剥离工艺制备出二维 MoS2晶体管。 2D MoS2 materials were obtained by mechanical exfoliation method and transferred to theSiO2 /Si substrate.Then 2D MoS2 transistors were fabricated by photolithography and lift-off processes.
41669 将二维 MoS2晶体管浸泡在不同质量浓度的聚乙烯醇 ( PVA) 溶液中，然后旋涂成膜并退火实现掺杂。 The 2D MoS2 transistors were soaked into different mass concentrations of poly (vinyl-alcohol) (PVA)solutions, then spin-coated to form PVA films and annealed to achieve doping.
41670 对掺杂前后二维 MoS2晶体管的电学性能进行测试。 The electrical propertiesof 2D MoS2 transistors before and after doping were tested.
41671 测试结果显示，当 PVA 溶液质量浓度为 0. 5%、1%和 2%时，掺杂后的二维 MoS2晶体管开态电流提高到 3 倍、3. 6 倍和 10 倍，有效电子迁移率提高到 1. 7 倍、2. 8 倍和 4. 3 倍，开态电阻降低了一个数量级以上。 The test results show that when the mass concentrations of PVA solution are 0.5%, 1% and 2% respectively, the on-state currents of doped 2DMoS2 transistors increase to 3, 3.6 and 10 times respectively, the effective electron mobility increases to1.7, 2.8 and 4.3 times, and the on-state resistance decreases by more than one order of magnitude.
41672 由于掺杂层的覆盖，二维 MoS2晶体管的稳定性有了显著提高，暴露在空气中30 d后未观察到电学性能有明显退化。 The stability of the 2D MoS2 transistor is significantly improved due to the doping layer, and no obviousdegradation of electrical properties is observed after being exposured to air for 30 d.
41673 研究结果表明，可以通过控制 PVA 溶液的质量浓度对二维MoS2晶体管的掺杂浓度进行调控，从而影响其电学性能。 The research resultsshow that the doping concentrations of 2D MoS2 transistors can be controlled by controlling the mass concentration of PVA solutions, affecting the electrical properties of 2D MoS2 transistors
41674 通过使用工艺计算机辅助设计 ( TCAD) 仿真技术提出了一种新型的带有夹层的垂直U 型栅极隧穿场效应晶体管 ( TFET) 结构。 A novel vertical U-shaped gate tunneling field-effect transistor (TFET) with sandwichlayer was proposed by using the technology computer-aided design (TCAD) simulation technology.
41675 该器件是通过优化基于 Ge 的栅极金属核垂直纳米线TFET 结构获得的。 This device was obtained by optimizing the Ge-based gate-metal-core vertical nanowire TFET.