ID 原文 译文
41656 该芯片的制作采用了 0. 1 μm T 型栅 GaN HEMT 技术，衬底为 50 μm 厚的 SiC。 The chip wasfabricated on SiC substrate with the thickness of 50 μm by using 0.1 μm T-gate GaN HEMT technology.
41657 芯片为三级级联拓扑结构，采用高低阻抗传输线、介质电容等进行匹配和偏置电路设计，实现低损耗输出， The chip was designed with three-stage topology structure, which used high and low impedance transmission lines, dielectric capacitors and other components for matching and bias circuit design to achieve lowloss output.
41658 芯片尺寸为3.37 mm×3. 53 mm×0. 05 mm。 The chip size is 3.37 mm×3.53 mm× 0.05 mm.
41659 测试结果表明，在漏源工作电压 15 V、88 ～ 92 GHz 频率范围内，该 MMIC 的线性增益大于 15 dB，饱和输出功率大于 3 W。 The test results show that at the drainsource operation voltage of 15 V and the frequency range of 88－92 GHz, the linear gain of the MMIC ismore than 15 dB, and the saturation output power is more than 3 W.
41660 该 MMIC 具有功率大、输入输出回波损耗小及应用范围广的优势。 The MMIC has the advantages ofhigh power, low input and output return loss and wide application range.
41661 采用 GaAs PHEMT 工艺，设计了一种 700 MHz 频段的高线性驱动放大器 MMIC。 A high linearity driver amplifier MMIC was designed for 700 MHz band by using theGaAs PHEMT process.
41662 该放大器内部集成了带通复合匹配网络结构的宽带输入匹配电路，通过两种幅频特性相反的匹配网络进行组合，有效地拓展了应用带宽，提高了线性度和增益平坦度。 A broadband input matching circuit with a combination of low and high passmatching networks was integrated in the amplifier, which expanded the application bandwidth andimproved the linearity and gain flatness by combining two matching networks with two opposite amplitudefrequency characteristics.
41663 放大电路采用两级放大结构，保证增益指标，引入稳定性设计以保证放大器工作的稳定性。 A two-stage amplifier structure was adopted to ensure the gain of the amplifier, and the stability design was introduced to ensure the stability of the amplifier.
41664 偏置电路采用带负反馈系统的有源镜像结构，提高了驱动能力，使电路更加稳定。 The bias circuit used anactive current mirror structure with a negative feedback system, which can improve the driving capabilityand stability of the circuit.
41665 该放大器集成输出检波器，采用二极管检波器结构实现功率检波，具有结构简单、占用芯片面积小的优点。 The amplifier also featured an output power detector, and a diode detectorstructure was adopted to realize power detection, which had the advantages of simple structure and smallchip area.