ID 原文 译文
41646 该模块基于自主研发的芯片组合设计而成，使用了一款 50 V 调制驱动器作为核心控制芯片，一款 60 V 高压PMOSFET 作为调制开关，一款固定输出电压的线性稳压器，一款负压线性稳压器为功率放大器提供栅极偏置电压。 This module was designedbased on the self-developed chips combination, using a 50 V modulation driver as the core control chipof the module, a 60 V high-voltage PMOSFET as the modulation switch, a fixed output voltage linearregulator, a negative voltage linear regulator to provide gate bias voltage for the power amplifier.
41647 经实验验证，该模块电路可以为 36 V、500 W 的 GaN 功率放大器提供稳定可靠的漏极控制电压及栅极偏置电压。 The experimental results show that this module circuit can provide stable and reliable drain control voltage andgate bias voltage for the 36 V, 500 W GaN power amplifier.
41648 此外，栅、漏电压上电时序受控，输出信号的上升、下降时间分别为 16. 3 ns 和79. 4 ns，能够很好地满足应用要求。 In addition, the gate and drain voltages areunder controller timing, and the rise and fall time of the output signal are 16.3 ns and 79.4 ns respectively, which can meet the application requirements
41649 采用 VIS 0. 15 μm BCD 工艺设计了一款应用于温度补偿恒温晶体振荡器 ( TCOCXO)专用集成电路 ( ASIC) 的数据修调电路。 A data trimming circuit applied to the temperature-compensated oven-controlled crystaloscillator (TCOCXO) application specific integrated circuit (ASIC) was designed based on VIS0.15 μm BCD process.
41650 该数据修调电路由逻辑控制电路和一种电可擦可编程只读存储器 ( EEPＲOM) 构成，主要功能是完成 TCOCXO ASIC 中温度补偿的控制及实现芯片的多模式工作。 The data trimming circuit was composed of a logic control circuit and a type of electrically erasable programmable read only memory (EEPＲOM) , which was used to control the temperature compensation in the TCOCXO ASIC and realize the multi-mode operate of the chip.
41651 与通过模拟函数发生器实现的补偿方式相比，使用该数据修调电路实现的温度补偿方法可以实现更高的补偿精度和更小的芯片面积。 Compared with the compensation method realized by the analog function generator, the proposed temperature compensation method realized by the data trimming circuit can achieve higher compensation precision and smaller chip area.
41652 通过该电路对 TCOCXO ASIC 进行调试与配置，搭载该 ASIC 的晶体振荡器在温度为－40 ～ 85 ℃ 时频率－温度稳定度可达!5×10－9。 The TCOCXO ASIC was debugged and configured with the proposed data trimming circuit.The crystal oscillator equipped with the TCOCXO ASIC can achieve a frequency-temperaturestability of ±5×10－9 at the temperature of －40－85 ℃ .
41653 TCOCXOASIC 的测试结果表明，这种修调方法在减小芯片面积的同时可以实现更高精度的频率－温度补偿。 The measurement results of the TCOCXO ASICshow that the proposed trimming method achieves higher-precision for frequency-temperaturecompensation and smaller chip area.
41654 基于 GaN HEMT 工艺，研制了一款 W 波段功率放大器 MMIC。 Based on GaN HEMT process, a power amplifier MMIC for W-band was developed.
41655 利用 Lange 耦合器将 3个饱和输出功率大于 1 W 的单元电路进行三路片上功率合成来实现该功率放大器 MMIC。 This power amplifier MMIC was realized by three-way on-chip power combination of three cell circuitsusing Lange coupler, the saturation output power of the unit circuit was greater than 1 W.