ID 原文 译文
41636 测试结果显示，用常规静态方式和动态方式处理的籽晶，其生长出晶体引晶部分的样品的平均迁移率分别约为 4 100 cm2 /( V·s) 和4 600 cm2 /( V·s) ，平均载流子浓度分别约为 7×1015 cm－3和 4×1015 cm－3。 The testresults show that the average mobilities of the seed grains grown by the conventional static method and dynamic method are about 4 100 cm2 /(V·s) and 4 600 cm2 /(V·s) , respectively, and the average carrier concentrations are about 7×1015 cm－3 and 4×1015 cm－3, respectively.
41637 通过该装置及工艺处理的籽晶，表面被处理得彻底、无沾污，容易生长出电学参数优异的晶体。 The surface of the seed crystaltreated by the device and the process is thoroughly treated and free from contamination, and it is easy togrow crystals with excellent electrical parameters.
41638 二维范德华材料凭借其优异的光学和电学特性，自被发现以来一直作为延续集成电路摩尔定律的重要基础电子材料而备受关注。 Due to the excellent optical and electrical properties of the two-dimensional van der Waals material, it has attracted much attention since it is discovered as an important basic electronicmaterial to continue Moore' s law of integrated circuits.
41639 通过机械剥离的方法得到高质量的二维材料进行实验室层面的研究工作已经不能满足现阶段的需要。 High-quality two-dimensional materials areobtained by mechanical stripping for laboratory research, the research has no longer meet the needs ofthe present stage.
41640 采用金属有机化学气相沉积 ( MOCVD) 技术可以得到高质量的大面积二维范德华材料，并具有生长层数和成核密度可控的优势。 High-quality large-area two-dimensional van der Waals materials can be obtained bymetal organic chemical vapor deposition (MOCVD) , which has the advantages of controllable growthlayers and nucleation density.
41641 以过渡金属硫化物 ( TMDC) 为例，分别从生长条件、金属有机源材料、衬底、催化剂等方面综述了采用MOCVD 技术生长二维范德华材料的研究进展，同时讨论了二维材料的范德华异质结构的特性及应用。 Taking transition-metal dichalcogenide (TMDC) as an example, theresearch progress of two-dimensional van der Waals materials grown by MOCVD is reviewed from theaspects of growth conditions, metal organic source materials, substrates and catalysts, and the properties and applications of van der Waals heterostructures of two-dimensional materials are alsodiscussed.
41642 利用 MOCVD 技术优势可以推动二维范德华材料的大规模应用。 Using the advantages of MOCVD technology can promote the large-scale application oftwo-dimensional van der Waals materials.
41643 最后总结了 MOCVD 法生长二维范德华材料现阶段的优势与不足，并对其未来的发展进行了展望。 Finally, the advantages and disadvantages of two-dimensionalvan der Waals materials grown by MOCVD are summarized, and their future development is prospected.
41644 随着 GaN 功率放大器的发展，其工作电压和输出功率越来越大，对电源调制器的要求也越来越高。 With the development of GaN power amplifiers, the working voltage and output powerare higher and higher, while the requirement for power modulator is also higher and higher.
41645 介绍了一种用于 36 V、500 W GaN 功率放大器的电源调制器模块。 A powermodulator module used for 36 V, 500 W GaN power amplifier was introduced.