ID 原文 译文
41626 结果表明，随着 SiC 量子点溶液浓度的增大 ( 4 ～ 12 μmol·L－1) ，其光致发光强度先增大后减小，且光致发光强度峰值出现在 8 μmol·L－1时; The results show that thephotoluminescence intensity of SiC QDs increases firstly and then decreases as the solution concentrationincreases (4－12 μmol·L－1) , and the peak photoluminescence intensity appeares at 8 μmol·L－1.
41627 SiC 量子点表面形成亲水性基团的关键在于腐蚀法制备过程中超声空化环节所营造的局部高压高温环境。 The key to the formation of hydrophilic groups on the surface of SiC QDs lies in the local high-pressure andhigh-temperature environment created by ultrasonic cavitation in the process of etching.
41628 建立了 3D 堆叠芯片硅通孔 ( TSV) 单元体模型，在单元体总体积和 TSV 体积占比给定时，考虑电－热－力耦合效应，以最高温度、 耗散率、最大应力和最大形变为性能指标，对TSV 横截面长宽比和单元体横截面长宽比进行双自由度构形设计优化。 A model of through-silicon via (TSV) element body in 3D stacked chips was established.With the fixed volume of whole element body and volume proportion of TSV, considering the electrothermo-stress coupling effect in the chip, and taking the highest temperature, entransy dissipation rate, maximum stress and maximum deformation as performance indexes, constructal design optimization withdouble-degree-of-freedom was performed on the cross-section aspect ratios of TSV and element body.
41629 结果表明，存在最佳的TSV 横截面长宽比使得单元体的最高温度、 耗散率和最大应力取得极小值，但对应不同优化目标的最优构形各有不同，且 TSV 两端电压和芯片发热功率越大，其横截面长宽比对各性能指标的影响越大。 The results show that there is an optimal cross-section aspect ratio of TSV for the element body, which minimizes the maximum temperature, entransy dissipation rate and maximum stress, but the optimal constructsfor different optimization indexes are different, and the greater the electric voltages at both ends of TSVand the chip heating power, the greater the influences of its cross-section aspect ratio on each performanceindex.
41630 铜、铝、钨 3 种材料中，钨填充 TSV 的热学和力学性能最优，但其电阻率较大。 Among copper, aluminum and tungsten, TSV filled with tungsten has the best thermal and mechanical properties, but its resistivity is higher.
41631 铜填充时，4 个指标中最大应力最敏感，优先考虑最大应力最小化设计需求以确定 TSV 几何参数，可以较好兼顾其他性能指标。 Among the four indexes for TSV filled with copper, the maximum stress is the most sensitive, and it can better take into account other performance indexes by prioritizing the design requirement of maximum stress minimization to determine TSV geometric parameters.
41632 为改善 InP 籽晶表面洁净度，保证 InP 材料生长时的电学参数并减小引晶阶段孪晶形成概率，设计了 InP 籽晶表面处理装置。 In order to improve the surface cleanliness of InP seed crystal, ensure the electrical parameters during the growth of InP material and reduce the probability of twin crystal formation during the initiation phase, a surface treatment device for InP seed crystal was designed.
41633 该装置采用动态方式对籽晶表面进行处理，采用原子力显微镜扫描处理后籽晶的表面形貌， The surface of the seedcrystal was treated in a dynamic way, and the surface morphology of the treated seed crystal was scannedby atomic force microscope.
41634 结果显示籽晶表面无杂质和沾污。 The results show that the surface of the seed crystal is free of impurities andcontamination.
41635 通过在晶体引晶部位的不同位置取样进行霍尔测试。 Hall test was performed by sampling at different locations of the induced crystal.