ID 原文 译文
41606 采用阶梯型结构的薄膜体声波谐振器 ( FBAＲ) 滤波器芯片和外匹配电路实现了一种输入输出端口阻抗均为 50 Ω 的宽带 FBAＲ 滤波器。 A broadband film bulk acoustic resonator (FBAＲ) filter with input and output portsimpedance of 50 Ω was realized by using a ladder-type FBAＲ filter chip and an external matching circuit.
41607 FBAＲ 滤波器芯片采用自主的 FBAＲ 滤波器工艺实现，外匹配电路采用 0. 35 μm GaAs 工艺实现，并在该芯片上植球，采用倒装工艺将FBAＲ 滤波器芯片与外匹配电路芯片进行异构集成。 The FBAＲ filter chip was realized by the independent FBAＲ filter process, and the external matchingcircuit was realized by 0.35 μm GaAs technology.The ball was planted on the chip, and the FBAＲfilter chip and the external matching circuit chip were integrated heterogeneously by the flip chip process.
41608 然后采用微组装工艺将异构集成芯片装配在标准陶瓷外壳中，外壳通过平行封焊工艺实现气密封装，体积仅为 3. 8 mm×3. 8 mm×1. 8 mm。 Then the heterogeneous integrated chip was assembled in a standard ceramic shell by the micro-assemblyprocess, and the shell was sealed by parallel seam sealing process.The volume of it is only 3.8 mm×3.8 mm× 1.8 mm.
41609 测试结果显示，该滤波器通带频率范围为 3 300～3 600 MHz，1 dB 带宽约为 300 MHz，相对带宽为 8. 7%，插入损耗为 1. 41 dB，在 3 250 MHz 和 3 650 MHz 处带外抑制分别为 16. 5 dBc 和48. 2 dBc。 The test results show that the passband frequency range of the filter is 3 300 －3 600 MHz, the 1 dB bandwidth is about 300 MHz, the relative bandwidth is 8.7%, and the insertionloss is 1.41 dB.The out-of-band rejection at 3 250 MHz and 3 650 MHz is 16.5 dBc and 48.2 dBc, respectively.
41610 将实测结果与仿真结果进行了对比，两者基本吻合。 The measured results are basically consistent with simulated ones.
41611 4H-SiC 外延薄膜是加工高频、大功率电子电力器件的理想半导体材料，而使用不同斜切角的衬底进行外延生长的工艺不同。 4H-SiC epitaxial film is an ideal semiconductor material for fabricating high frequency andhigh power electronic power devices.The epitaxial growth processes using substrates with different off-cutangles are different.
41612 在 1. 2°小切角的 4H-SiC 离轴衬底上采用化学气相沉积( CVD) 法生长同质外延薄膜。 The homo-epitaxial film was grown on the 4H-SiC off-axis substrate with a small off-cutangle of 1.2° by chemical vapor deposition (CVD) method.
41613 为了改善外延薄膜的表面形貌，对生长温度、原位表面处理和 C /Si 比这三个重要的生长参数进行了优化。 In order to improve the surface morphology ofthe epitaxial film, the three important growth parameters, including growth temperature, in-situ surfacetreatment and C/ Si ratio, were optimized.
41614 利用光学显微镜和原子力显微镜 ( AFM) 观察外延薄膜的表面形貌，发现较高的生长温度和较低的 C / Si 比可以有效降低缺陷密度和表面粗糙度。 The optical microscope and atomic force microscope (AFM) wereused to observe the surface morphology of the epitaxial film.It is found that higher growth temperature andlower C/ Si ratio can effectively reduce defect density and surface roughness.
41615 在生长前使用硅烷气体进行原位表面处理可以有效减小外延薄膜表面的台阶聚束效应。 In-situ surface treatment in silane atmosphere prior to the growth can effectively reduce surface step bunching effect of the epitaxial film.