| ID | 原文 | 译文 |
| 41596 | 基于绝缘体上硅 ( SOI) 工艺完成流片并进行测试。 | The ASIC was fabricated based on silicon on insulator (SOI) process and wastested. |
| 41597 | 测试结果表明，该 ASIC 抗辐照能力 ( 总剂量) 大于 100 krad( Si) 。 | The test results show that the ASIC can resist irradiation (total ionizing dose) over 100 krad (Si) . |
| 41598 | 此外，利用此 ASIC 对恒温晶振实现了自动化温度控制和频率校准的优化，提升了晶振产品的可靠性和可生产性。 | Furthermore, with the ASIC, the automatic temperature control and optimization of frequency adjustmentof oven controlled crystal oscillators are realized, promoting the reliability and productibility of crystaloscillator products. |
| 41599 | 研究了一种新型双埋氧绝缘体上硅 ( DSOI) NMOSFET 的自热效应 ( SHE) 。 | The self-heating effect (SHE) of a new type of double silicon on insulator (DSOI)NMOSFETs was investigated. |
| 41600 | 通过实验测试并结合计算机数值模拟分析了 SHE 对 DSOI NMOSFET 输出特性的影响。 | The influence of the SHE on the output characteristics of DSOI NMOSFETswas analyzed through experimental tests and computer numerical simulation. |
| 41601 | 仿真结果显示DSOI NMOSFET 的背栅引出结构形成了额外的散热通道。 | The simulation results showthat the back gate structure derived from the DSOI NMOSFETs forms an additional heat dissipation channel. |
| 41602 | 重点研究了器件电压和环境温度对 SHE的影响，结果表明随着漏极和栅极电压的增加，器件体区晶格温度升高，SHE 增强; | The impacts of device voltages and ambient temperature on the SHE were emphatically studied.Theresults show that with the increase of drain and gate voltages, the body lattice temperature increases andthe SHE enhances. |
| 41603 | 随着环境温度的升高，退化电流降低，SHE 减弱。 | With the increase of ambient temperature, the degradation current decreases and theSHE weakens. |
| 41604 | 此外，重点分析了背栅偏置电压对器件 SHE 的影响， | In addition, the effect of the back gate bias voltage on the SHE of the device was analyzed emphatically. |
| 41605 | 研究发现负的背栅偏置电压对全耗尽绝缘体上硅和 DSOI NMOSFET 的 SHE 均表现出抑制效果，且 DSOI NMOSFET 的背栅展现出了更好的抑制效果。 | It is found that the negative back gate bias voltage can suppress the SHE of both fullydepleted silicon on insulator and DSOI NMOSFETs, and the back gate of DSOI NMOSFETs shows bettersuppression effect. |