ID |
原文 |
译文 |
41576 |
微纳技术的发展带动了微纳米检测计量仪器的发展, |
The development of micro-nano technology has driven the development of micro-nanomeasurement instruments. |
41577 |
微纳米测量仪器的智能化、集成化和小型化是仪器研发中的共性问题。 |
The intellectualization, integration and miniaturization of micro-nano measurement instruments are common problems in the development of instrument. |
41578 |
在白光干涉测量系统中,设计了基于 STM32 处理器的控制系统, |
A control system for white light interferometry based on STM32 processor was designed. |
41579 |
该系统将原本分立的光源控制、相机控制和样品台控制等控制模块集成构建于一台控制器。 |
In this system, the original discrete controlmodules of light source control, camera control and sample stage control were integrated into a controller. |
41580 |
针对白光干涉测量系统的控制需求设计开发了驱动电路、通信电路、光源控制电路和相机触发电路等。 |
According to the control requirements of the white light interferometry system, the driving circuit, communication circuit, light source control circuit and camera trigger circuit were designed and developed. |
41581 |
设计优化了信号同步、光源控制策略,从而提高了扫描同步性和测量稳定性。 |
The signal synchronization and light source control strategy were optimized, which improved the scanningsynchronicity and measurement stability. |
41582 |
控制系统的集成化设计有效提高了光学三维轮廓仪的小型化和集成性,降低了仪器的制造和维护成本。 |
The integrated design of the control system effectively improvesthe miniaturization and integration of the optical three-dimensional profilometer, and reduces the manufacturing and maintenance costs of the instrument. |
41583 |
近年来,由于有机场效应晶体管 ( OFET) 具有成本低、机械柔性优异且可大面积制备等优点成为国际研究的前沿领域之一。 |
In recent years, with the advantages of low cost, excellent mechanical flexibility andlarge-area fabrication, organic field-effect transistor (OFET) has become one of the frontier fields of international research. |
41584 |
迄今为止,OFET 的载流子迁移率已超过了非晶硅薄膜晶体管,在柔性集成电路中表现出了巨大的应用潜力。 |
So far, the carrier mobility of OFETs has surpassed that of amorphous silicon thinfilm transistors, showing great application potential in flexible integrated circuits. |
41585 |
随着技术的不断改进,OFET 的工作频率不断提高。 |
With the continuousimprovement of technology, the operating frequency of OFETs is constantly increasing. |