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41566 结果表明，在 250 ℃沉积温度下，以 N2、H2和 Ar 的混合气体的等离子体作为共反应物，在相同工艺条件下仅增加前驱体三甲基铝 ( TMA) 脉冲注入之后的氮气吹扫时间 ( tp1 ) ，制备的 AlN 薄膜的 ( 002) 晶面择优取向趋于显著， The results show that at adeposition temperature of 250 ℃, with the mixed plasmas of N2, H2 and Ar as co-reactants, under thesame process condition and only by increasing the nitrogen purge time (tp1) after the pulse injection ofprecursor trimethylaluminum (TMA) , the preferred orientation of (002) crystal plane of the preparedAlN thin films tends to be significant.
41567 说明 tp1的增加可以促进 Al 和 N 原子的有序排列，并促进 ( 002) 晶面择优取向形成。 It shows that the increase of tp1 can promote the orderly arrangementof Al and N atoms and the formation of preferred orientation of (002) crystal plane.
41568 实验中，tp1为 30 s 且循环次数为 1 150 时，PEALD 制备的 AlN 薄膜表面平整光滑，均方根表面粗糙度为 0. 885 nm，( 002) 晶面衍射峰最明显，薄膜中氧原子数分数为 11. 04%， In the experiments, when tp1 is 30 s with 1 150 cycles, the surface of the AlN thin film prepared by PEALD is smooth with aroot mean square surface roughness of 0.885 nm, and the (002) crystal plane diffraction peak intensityis maximum.The atom fraction of oxygen in AlN thin film is 11.04%.
41569 氧原子在AlN 薄膜中形成氧缺陷并形成一种稳定的基于八面体配位铝的新型氧缺陷相，XPS 结果证明了N—O—Al 键的形成。 Oxygen atoms form oxygen defectsin AlN thin films and a new stable phase of oxygen defect based on octahedral coordination aluminum.TheXPS results show that N—O—Al bond is formed.
41570 针对陶瓷外壳中影响高频信号传输性能的键合指、传输线、过孔和返回路径平面等结构进行仿真研究，得到了在 0～20 GHz 频带内的最优参数模型。 The structures of bonding fingers, transmission lines, vias and return path planes thataffected the high-frequency signal transmission performance of in the ceramic package were simulated, and the optimal parameter model at the frequency band of 0 － 20 GHz was obtained.
41571 将其应用于某 CLGA49 陶瓷外壳产品，高频信号传输性能实测结果与仿真结果符合较好，验证了仿真结果的准确性。 Applying thesemodels to a certain type of CLGA49 ceramic package product, the measured results of high-frequencysignal transmission performance are in good agreement with the simulation results, which verifying the accuracy of simulation results.
41572 结果表明，增大键合指与键合丝连接处的宽度为与之相连接微带传输线宽 2 ～ 2. 3 倍时，传输性能显著提高; The results show that when the width of the joint between the bonding fingerand the bonding wire is increased to 2－2.3 times of the transmission line width of the microstrip connected with it, the transmission performance is significantly improved.
41573 单端阻抗为 50 Ω，线宽更窄的互连线更有利于传输高频信号; The single-ended impedance is50 Ω, and the interconnection line with narrower line width is more conducive to the transmission ofhigh-frequency signals.
41574 过孔直径增大，接地过孔长度增长会改善传输性能; With the increase of via diameter and the length of ground via, the transmissionperformance will be improved.
41575 减少陶瓷外壳中返回路径平面的层数会改善高频信号的传输性能。 Ｒeducing the number of layers of the return path plane in the ceramic package, the transmission performance of high-frequency signals will be improved.